Exploring the Charge Transport in Conjugated Polymers

Xu, Yong; Sun, Huabin; Li, Wenwu; Lin, Yen‐Fu; Balestra, F.; Ghibaudo, G.; Noh, Yong‐Young

doi:10.1002/adma.201702729

Cited by 76 publications

(60 citation statements)

References 35 publications

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“…An important feature in all these highest performing polymers is a degree of energetic disorder that is on the order of ~k B T (refs. [55][56][57] ). The energetic disorder can be quantified, for example, by determining the Urbach energy, which is a measure of the width of the tail of the optical absorption near the bandgap.…”

Section: Charge Transport In Low-disorder Conjugated Polymersmentioning

confidence: 99%

Charge transport in high-mobility conjugated polymers and molecular semiconductors

et al. 2020

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Conjugated polymers and molecular semiconductors are emerging as a viable semiconductor technology in industries such as displays, electronics, renewable energy, sensing and healthcare. A key enabling factor has been significant scientific progress in improving their charge transport properties and carrier mobilities, which has been made possible by a better understanding of the molecular structure-property relationships and the underpinning charge transport physics. Here we aim to present a coherent review of how we understand charge transport in these high-mobility van der Waals bonded semiconductors. Specific questions of interest include estimates for intrinsic limits to the carrier mobilities that might ultimately be achievable; a discussion of the coupling between charge and structural dynamics; the importance of molecular conformations and mesoscale structural features; how the transport physics of conjugated polymers and small molecule semiconductors are related; and how the incorporation of counterions in doped films-as used, for example, in bioelectronics and thermoelectric devices-affects the electronic structure and charge transport properties.

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Section: Charge Transport In Low-disorder Conjugated Polymersmentioning

confidence: 99%

Charge transport in high-mobility conjugated polymers and molecular semiconductors

et al. 2020

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“…Measured Schottky barrier values range from 0.1 to 1 eV at interfaces between metals and organic semiconductors . One common method to determine the Schottky barrier is to directly measure EA, IP, and WF using photoelectron spectroscopy (PES).…”

Section: Charge Injection Through a Metal–semiconductor Interfacementioning

confidence: 99%

Contact Resistance in Organic Field‐Effect Transistors: Conquering the Barrier

Waldrip

Jurchescu

Gundlach

et al. 2019

Adv Funct Materials

225

261

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Organic semiconductors have sparked interest as flexible, solution processable, and chemically tunable electronic materials. Improvements in charge carrier mobility put organic semiconductors in a competitive position for incorporation in a variety of (opto-)electronic applications. One example is the organic field-effect transistor (OFET), which is the fundamental building block of many applications based on organic semiconductors. While the semiconductor performance improvements opened up the possibilities for applying organic materials as active components in fast switching electrical devices, the ability to make good electrical contact hinders further development of deployable electronics. Additionally, inefficient contacts represent serious bottlenecks in identifying new electronic materials by inhibiting access to their intrinsic properties or providing misleading information. Recent work focused on the relationships of contact resistance with device architecture, applied voltage, metal and dielectric interfaces, has led to a steady reduction in contact resistance in OFETs. While impressive progress was made, contact resistance is still above the limits necessary to drive devices at the speed required for many active electronic components. Here, the origins of contact resistance and recent improvement in organic transistors are presented, with emphasis on the electric field and geometric considerations of charge injection in OFETs.semiconductors with superior intrinsic charge transport properties, there is a stringent need to improve the device properties in order to allow organic devices to fulfill their technological prospectives. In the organic semiconductor community, contact resistance (R C ) has come under increased scrutiny as it is apparent that the final device performance is often domi nated by carrier injection, rather than the transport through the semiconductor layer. Contact resistance can impact OFET development in multiple ways. First, if not accounted for, a high contact resistance may lead to inaccurate extraction of the device parameters. Second, any inaccuracies in parameter extraction can have significant consequences on material development, from generating incorrect structure-property relationships to discarding organic semiconductors whose efficient intrinsic electrical properties have been masked by inefficient contacts. Beyond OFET and semiconductor characterization, analog, low power, and high frequency applications require a greater level of device parameter control than has been obtained in typical DC, high-voltage OFETs. For analog applications, e.g., integration of conditioning circuits such as local sense amps for distributed flexible sensor arrays, nonlinearity of the transistor response inhibits proper functioning and limits applicability of common models used to design circuitry. Low power device development for novel materials are hindered by the high voltage turn-on and current suppression in devices with large R C . Considering high-frequency applications, Klauk suggest...

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“…Although contact doping is an effective method to improve contact injection in silicon‐based devices, a long‐standing problem for application in organic‐based devices is the unintentional diffusion into the channel region that leads to higher off‐current . A recently reported method helps to solve this problem by confining the dopants near the source‐drain contacts.…”

Section: Optimization Of Nonideal Ofetsmentioning

confidence: 99%

Understanding, Optimizing, and Utilizing Nonideal Transistors Based on Organic or Organic Hybrid Semiconductors

Yang

Dai

et al. 2019

Adv Funct Materials

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Many advanced materials have been developed for organic field-effect transistors (OFETs) or thin-film transistors (TFTs) based on organic and organic hybrid materials. However, although many new OFETs exhibit superior characteristic parameters (such as high mobility), most of them show nonideal performances that have strongly limited progress in the design of molecules, the understanding of transport mechanisms, and the circuit applications of OFETs. In this review, the device physics of ideal and nonideal OFETs is discussed first to understand the factors that limit effective mobility in semiconducting channels, distort the potential distribution, or reduce the drift electric field. Then, recent advances in optimizing the material combinations, device structures, and fabrications of OFETs toward ideal transistors are discussed. Based on the good control of materials and interfaces, some new and novel concepts to utilize the nonideal properties of OFETs to build low-power circuits and integrated sensors are also discussed.

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Exploring the Charge Transport in Conjugated Polymers

Cited by 76 publications

References 35 publications

Charge transport in high-mobility conjugated polymers and molecular semiconductors

Charge transport in high-mobility conjugated polymers and molecular semiconductors

Contact Resistance in Organic Field‐Effect Transistors: Conquering the Barrier

Understanding, Optimizing, and Utilizing Nonideal Transistors Based on Organic or Organic Hybrid Semiconductors

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