Exploring Ni–Si thin-film reactions by means of simultaneous synchrotron X-Ray diffraction and substrate curvature measurements

Gergaud, P.; Rivero, C.; Gailhanou, M.; Thomas, O.; Froment, B.; Jaouen, H.

doi:10.1016/j.mseb.2004.07.037

Cited by 14 publications

(4 citation statements)

References 21 publications

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“…By building up an interface atomic model on the length scale of typical core region dimensions (10 nm), we suggest that complex interface reconstructions, taking place on regions wider than the (1 Â 1) area, may lower the interface energy and allow the growth of unstrained cores, as those detected in the experiments. Recent papers (Liew et al, 2004;Gergaud et al, 2004) have measured the strain evolution during Ni/Si solid-state reactions where different silicide phases build up between the initial [unreacted Ni/Si(001)] and final [completely reacted NiSi/Si(001)] states. A stress/strain relationship derived from elasticity theory is used to obtain values of stress at each instant of time: until Ni consumption and/or NiSi formation, Ni 2 Si layers are found to grow under high compressive stress.…”

Section: Discussionmentioning

confidence: 99%

Structural characterization of Ni₂Si pseudoepitaxial transrotational structures on [001] Si

Alberti

Bongiorno

Alippi

et al. 2006

Acta Crystallogr Sect B

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The formation of pseudoepitaxial transrotational structures has been observed during the early stage of the reaction of thin Ni layers on [001] Si substrates. During the reaction, large Ni(2)Si domains, characterized by single bending contours, establish a close relationship with the silicon lattice. The silicide domain consists of a core region, along the bending contour, where the silicide layer has grown epitaxially with silicon. Outside the core, the planes, at first parallel to the bending contour, continuously bend over the range 15-20 degrees , whilst those at 90 degrees remain aligned with silicon across the interface. Owing to the cylindrical symmetry of those transrotational structures, transmission electron microscopy analyses provided direct evidence of the bending phenomenon and allowed a complete description of the fully relaxed domain structure. A non-conventional mechanism of strain relaxation has been proposed, which is competitive with respect to the usual formation of misfit dislocations. The competitive phenomenon consists of Ni(2)Si lattice bending and rearrangement of the interface to minimize the Gibbs free energy of the domain.

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Section: Discussionmentioning

confidence: 99%

Structural characterization of Ni₂Si pseudoepitaxial transrotational structures on [001] Si

Alberti

Bongiorno

Alippi

et al. 2006

Acta Crystallogr Sect B

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“…Recently, using a synchrotron source, composition profiles in Mo/V multilayers have been investigated in situ during heat treatments [31]. Simultaneous diffraction and wafer curvature experiments have been reported [32] during the reaction of a Ni thin film with a Si substrate.…”

Section: Inhomogeneous Strainsmentioning

confidence: 99%

X-ray scattering: A powerful probe of lattice strain in materials with small dimensions

Thomas¹,

Loubens²,

Gergaud³

et al. 2006

Applied Surface Science

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“…Figure 4 shows a 224 reciprocal space map measured on a Si (001) single crystal covered by an array of amorphous Si 3 N 4 lines [24] parallel to the [ ] Most of these x-ray scattering experiments are now available in-situ either during mechanical loading or thermal cycling. Simultaneous diffraction and wafer curvature experiments have been reported [27] during the reaction of a Ni thin film with a Si substrate. It allows for the observation of grain rotation and shows the activation of different slip systems within the same grain.…”

Section: Inhomogeneous Strainsmentioning

confidence: 99%

X-ray scattering: a wonderful tool to probe lattice strains in materials with small dimensions

Thomas¹,

Loubens²,

Gergaud³

2004

MRS Proc.

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X-ray diffraction was recognized from the early days as highly sensitive to atomic displacements. Indeed structural crystallography has been very successful in locating with great precision the position of atoms within an individual unit cell. In disordered systems it is the average structure and fluctuations about it that may be determined. In the field of mechanics diffraction may thus be used to evaluate elastic displacement fields. In this short overview we give examples from recent work where x-ray diffraction has been used to investigate average strains in lines, films or multilayers. In small objects the proximity of surfaces or interfaces may create very inhomogeneous displacement fields. X-ray scattering is again one of the best methods to determine such distributions. The need to characterize displacement fields in nanostructures together with the advent of third generation synchrotron radiation sources has generated new and powerful methods (anomalous diffraction, coherent diffraction, microdiffraction, …). We review some of the recent and promising results in the field of strain measurements in small dimensions via X-ray diffraction. INTRODUCTIONSince the beginning of the nineties condensed matter physics has been increasingly concerned with properties of nm size objects. This trend is not simply a consequence of the steady miniaturization in electron devices [1]. It is also a result of fundamental discoveries, which show that new physical (magnetic, electronic, mechanical, …) properties appear at this scale. The search for specific size effects on physical properties should not shadow the influence of extremely high elastic strains inherent to these scales. Indeed it is now well established that materials in small dimensions [2] can sustain extremely high elastic strains. X-ray diffraction (XRD) has been recognized from the very early days [3,4] as a very sensitive tool to investigate lattice spacings and thus displacement fields. Homogeneous strains can be determined in a straightforward manner in ultrathin layers using synchrotron radiation. Strain fields are, however, Mater. Res. Soc. Symp. Proc. Vol. 840

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Exploring Ni–Si thin-film reactions by means of simultaneous synchrotron X-Ray diffraction and substrate curvature measurements

Cited by 14 publications

References 21 publications

Structural characterization of Ni₂Si pseudoepitaxial transrotational structures on [001] Si

Structural characterization of Ni₂Si pseudoepitaxial transrotational structures on [001] Si

X-ray scattering: A powerful probe of lattice strain in materials with small dimensions

X-ray scattering: a wonderful tool to probe lattice strains in materials with small dimensions

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Exploring Ni–Si thin-film reactions by means of simultaneous synchrotron X-Ray diffraction and substrate curvature measurements

Cited by 14 publications

References 21 publications

Structural characterization of Ni2Si pseudoepitaxial transrotational structures on [001] Si

Structural characterization of Ni2Si pseudoepitaxial transrotational structures on [001] Si

X-ray scattering: A powerful probe of lattice strain in materials with small dimensions

X-ray scattering: a wonderful tool to probe lattice strains in materials with small dimensions

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Structural characterization of Ni₂Si pseudoepitaxial transrotational structures on [001] Si

Structural characterization of Ni₂Si pseudoepitaxial transrotational structures on [001] Si