2022
DOI: 10.48550/arxiv.2201.00294
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Exploring Native Atomic Defects in NiTe2

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(5 citation statements)
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“…This defect, labeled as type C, changes drastically its appearance as a function of the sample voltage, showing up as a bright protrusion at unoccupied states and a dark ring at occupied states. Finally, an additional defect (figure 2(g)) is also found although much less abundant, type D. Surprisingly, we did not observe Te vacancies, in contrast to previous works on PtTe 2 crystals [27] and other TMDs [24,51] where they are resolved as depressions at Te-terminated surfaces. We attribute this to the different growth process used in our work.…”
Section: Structural Characterizationcontrasting
confidence: 89%
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“…This defect, labeled as type C, changes drastically its appearance as a function of the sample voltage, showing up as a bright protrusion at unoccupied states and a dark ring at occupied states. Finally, an additional defect (figure 2(g)) is also found although much less abundant, type D. Surprisingly, we did not observe Te vacancies, in contrast to previous works on PtTe 2 crystals [27] and other TMDs [24,51] where they are resolved as depressions at Te-terminated surfaces. We attribute this to the different growth process used in our work.…”
Section: Structural Characterizationcontrasting
confidence: 89%
“…Similar defects were previously reported in other transition metal chalcogenides (TMCs), i.e. PtSe 2 [26], NiTe 2 [24] and MnBi 2 Te 4 [31], and attributed to vacancies or chalcogen substitutions in the first metallic layer of the TMCs. The second most frequently observed defect is the type B (figure 2(e)), with an incidence of 6.90 × 10 11 cm −2 .…”
Section: Structural Characterizationsupporting
confidence: 83%
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