Exploring High Refractive Index Silicon-Rich Nitride Films by Low-Temperature Inductively Coupled Plasma Chemical Vapor Deposition and Applications for Integrated Waveguides

Ng, Doris K. T.; Wang, Qian; Wang, Ting; Ng, Shi Ling; Toh, Yeow-Teck; Lim, Kim-Peng; Yang, Yi; Tan, Dawn T. H.

doi:10.1021/acsami.5b06329

Cited by 77 publications

(39 citation statements)

References 20 publications

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“…Detailed studies into the film growth are provided in ref. 20. Precursor gases used are SiH 4 and N 2 ; NH 3 is intentionally avoided as it is likely to generate unwanted N–H bonds, which have absorption peaks close to the 1.55 μm wavelength63.…”

Section: Methodsmentioning

confidence: 99%

“…Values are taken from refs 13, 20, 28, 29, 33, 34, 35, 36, 37, 38, 39, 40, 43, 50, 53, 55, 65, 66. The nonlinear refractive index and bandgap energies for each material follow a scaling rule as indicated by the grey solid line as a guide to the eye.…”

Section: Figurementioning

confidence: 99%

“…Contrary to rare-earth doped and Raman amplifiers, where the gain wavelength is fixed with respect to the pump wavelength, optical parametric amplification allows for an additional design degree of freedom, where light at carefully designed wavelengths may be engineered to undergo amplification via the transfer of photons from the pump. In this process, conservation of momentum is satisfied via phase matching techniques, which have advanced significantly to now cover approaches such as tailoring of waveguide geometries111213141516, quasi-phase-matched structures1718, metamaterials19 and first-principles materials synthesis20. In addition to the ability for optical parametric amplifiers to amplify light at a large range of wavelengths with respect to the pump, the amplified signals scale quadratically with the pump power, enabling extremely large amplification factors.…”

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confidence: 99%

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Pushing the limits of CMOS optical parametric amplifiers with USRN:Si7N3 above the two-photon absorption edge

et al. 2017

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CMOS platforms operating at the telecommunications wavelength either reside within the highly dissipative two-photon regime in silicon-based optical devices, or possess small nonlinearities. Bandgap engineering of non-stoichiometric silicon nitride using state-of-the-art fabrication techniques has led to our development of USRN (ultra-silicon-rich nitride) in the form of Si7N3, that possesses a high Kerr nonlinearity (2.8 × 10−13 cm2 W−1), an order of magnitude larger than that in stoichiometric silicon nitride. Here we experimentally demonstrate high-gain optical parametric amplification using USRN, which is compositionally tailored such that the 1,550 nm wavelength resides above the two-photon absorption edge, while still possessing large nonlinearities. Optical parametric gain of 42.5 dB, as well as cascaded four-wave mixing with gain down to the third idler is observed and attributed to the high photon efficiency achieved through operating above the two-photon absorption edge, representing one of the largest optical parametric gains to date on a CMOS platform.

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Section: Methodsmentioning

confidence: 99%

Section: Figurementioning

confidence: 99%

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confidence: 99%

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Pushing the limits of CMOS optical parametric amplifiers with USRN:Si7N3 above the two-photon absorption edge

et al. 2017

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“…Preparation of the samples start with deposition of 300 nm thick SiO 2 on 2‐inch (100) InP wafers using inductively coupled plasma chemical vapor deposition (ICP‐CVD) . This 300 nm thick SiO 2 layer will act as hard mask during InP etching.…”

Section: Anisotropic Etching Of Inp‐based Nano‐structuresmentioning

confidence: 99%

Sub‐Micron Anisotropic InP‐based III–V Semiconductor Material Deep Etching for On‐Chip Laser Photonics Devices

Lee

Krishnamurthy

et al. 2017

Adv Eng Mater

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Two InP-based III-V semiconductor etching recipes are presented for fabrication of on-chip laser photonic devices. Using inductively coupled plasma system with a methane free gas chemistry of chlorine and nitrogen at a high substrate temperature of 250 C, high aspect ratio, anisotropic InP-based nano-structures are etched. Scanning electron microscopy images show vertical sidewall profile of 90 AE 3 , with aspect ratio as high as 10. Atomic Force microscopy measures a smooth sidewall roughness root-mean-square of 2.60 nm over a 3 Â 3 μm scan area. The smallest feature size etched in this work is a nano-ring with inner diameter of 240 nm. The etching recipe and critical factors such as chamber pressure and the carrier plate effect are discussed. The second recipe is of low temperature (À10 C) using Cl 2 and BCl 3 chemistry. This recipe is useful for etching large areas of III-V to reveal the underlying substrate. The availability of these two recipes has created a flexible III-V etching platform for fabrication of on-chip laser photonic devices. As an application example, anisotropic InP-based waveguides of 3 μm width are fabricated using the Cl 2 and N 2 etch recipe and waveguide loss of 4.5 dB mm À1 is obtained.

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“…In silicon nitride (SiN) compounds, like silicon oxynitride and silicon rich nitride, the refractive index can be tuned over a wide range, potentially from 1.45 to about 2, yet at the expense of higher losses [1,2]. Silicon oxycarbide (SiOC) is a versatile material that has been used in a variety of applications including Li-ion batteries [3], photoluminescence [4], electroluminescence [5], and low-k interlayer dielectric [6,7].…”

Section: Introductionmentioning

confidence: 99%

Waveguiding Light into Silicon Oxycarbide

2017

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Featured Application: Silicon oxycarbide is demonstrated to be a potential photonic platform for integrated optics applications. Abstract:In this work, we demonstrate the fabrication of single mode optical waveguides in silicon oxycarbide (SiOC) with a high refractive index n = 1.578 on silica (SiO 2 ), exhibiting an index contrast of ∆n = 8.2%. Silicon oxycarbide layers were deposited by reactive RF magnetron sputtering of a SiC target in a controlled process of argon and oxygen gases. The optical properties of SiOC film were measured with spectroscopic ellipsometry in the near-infrared range and the acquired refractive indices of the film exhibit anisotropy on the order of 10 −2 . The structure of the SiOC films is investigated with atomic force microscopy (AFM) and scanning electron microscopy (SEM). The channel waveguides in SiOC are buried in SiO 2 (n = 1.444) and defined with UV photolithography and reactive ion etching techniques. Propagation losses of about 4 dB/cm for both TE and TM polarizations at telecommunication wavelength 1550 nm are estimated with cut-back technique. Results indicate the potential of silicon oxycarbide for guided wave applications.

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Exploring High Refractive Index Silicon-Rich Nitride Films by Low-Temperature Inductively Coupled Plasma Chemical Vapor Deposition and Applications for Integrated Waveguides

Cited by 77 publications

References 20 publications

Pushing the limits of CMOS optical parametric amplifiers with USRN:Si7N3 above the two-photon absorption edge

Pushing the limits of CMOS optical parametric amplifiers with USRN:Si7N3 above the two-photon absorption edge

Sub‐Micron Anisotropic InP‐based III–V Semiconductor Material Deep Etching for On‐Chip Laser Photonics Devices

Waveguiding Light into Silicon Oxycarbide

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