Charge carrier scattering is critical to the electrical properties of two-dimensional materials such as graphene, transition metal dichalcogenide monolayers, black phosphorene, and tellurene. Beyond pristine two-dimensional materials, further tailored properties can be achieved by nanoporous patterns such as nano-or atomic-scale pores (antidots) across the material. As one example, structure-dependent electrical/optical properties for graphene antidot lattices (GALs) have been studied in recent years. However, detailed charge carrier scattering mechanism is still not fully understood, which hinders the future improvement and potential applications of such metamaterials. In this paper, the energy sensitivity of charge-carrier scattering and thus the dominant scattering mechanisms are revealed for GALs by analyzing the maximum Seebeck coefficient with a tuned gate voltage and thus shifted Fermi levels. It shows that the scattering from pore-edge-trapped charges is dominant, especially at elevated temperatures. For thermoelectric interests, the gate-voltage-dependent power factor of different GAL samples are measured as high as 554 μW/cm·K at 400 K for a GAL with the square