Exploration of the ultimate patterning potential of focused ion beams

Abstract

We aim to explore the nanostructuring potential of a highly focused pencil of ions. We show that focused ion beam technology ͑FIB͒ is capable of overcoming some basic limitations of current nanofabrication techniques and allowing innovative patterning schemes for nanoscience. In this work, we first detail the very high resolution FIB instrument developed specifically to meet nanofabrication requirements. Then we introduce and illustrate some new patterning schemes for nextgeneration FIB processing. These patterning schemes are: 1. nanoengraving of membranes as a template for nanopores and nanomask fabrication; 2. local defect injection for magnetic thin film direct patterning; 3. function of graphite substrates to prepare 2-D organized arrays of clusters; and 5. selective epitaxy of III-V semiconductors on FIB patterned surfaces. Finally, we show that FIB patterning allows "bottom-up" or "organization" processes.

Local tuning of CoPt nanoparticle size and density with a focused ion beam nanowriter

“…In the light of this work, we selected a concept allowing reproducible generation of sub-10 nm beam spots (figure 1(b)) with a transported current in the range 2-8 pA. This ion optics described elsewhere [1] was optimized for gallium ions with 30-40 keV beam energies. • The FIB nanowriter architecture: the FIB system we have developed is based on a nanowriter architecture concept i.e.…”

“…Due to the need to develop technologies compatible with mass-production requirements, alternative tools capable to perform rapid prototyping of individual nanodevices are also required. To address these challenges, we have developed an ultra-high resolution focused ion beam (FIB) system [1]. The interest of using this FIB machine lies in its capability to allow the realization of irradiated patterns that can be organized with very precise geometrical (a few nm) and fluence control.…”

Model for domain wall pinning by randomly distributed nanosized defects in ultrathin magnetic films

“…For example, dense arrays of artificial defects can be patterned by a focused ion beam (FIB) [1,2]. The ion beam (down to 5 nm in diameter [3]) may be eventually focused to a length scale smaller than the DW width, δ w . Thus, it has become possible to modify the domain wall (DW) pinning landscape without substantially altering the film topology.…”

Creation of damage-free ferroelectric nanostructures via focused ion beam milling

“…Focused ion beam milling (FIB) techniques have gained considerable attention for their ability to accurately fabricate nanostructured devices in thin films [19,11]. Whilst it is possible to define a region to be milled with a resolution down to 10 nm [10,14,6], there are inherent flaws with the milling process. The high energy gallium ions (5-30 kV) used to sputter away material have a penetration depth of approximately 20 nm [19].…”