Exploration of Terahertz Imaging with Silicon MOSFETs

Lisauskas, Alvydas; Bauer, Maris; Boppel, Sebastian; Mundt, Martin; Khamaisi, Bassam; Socher, Eran; Venckevičius, Rimvydas; Minkevičius, Linas; Kašalynas, Irmantas; Seliuta, D.; Valušis, Gintaras; Krozer, Viktor; Roskos, Hartmut G.

doi:10.1007/s10762-013-0047-7

Cited by 95 publications

(66 citation statements)

References 43 publications

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“…The optimum NEP opt is also shifted to better (lower) values with the antenna resistance R A,R shift from R A,R = 100 Ω for dipole antenna up to R A,R = 300 Ω [14,23] for patch antenna.…”

Section: Thz Rectifying Detector Parametersmentioning

confidence: 98%

“…Relatively low noise (when being zero biased [13]), small dimensions, and availability of technologies make these detectors favorable for subTHz/THz wave detection. All these rectifying detectors are rather fast (the response time τ ≤ 10 -9 s in Si MOSFET detectors [14], τ ≤ 10 -11 s in GaAs uncooled FETs [15], τ ≤ 10 -11 s in SBDs [16]). As direct detection detectors, they can operate in wide spectral ranges (for Si MOSFET detectors ν ≤ 9 THz [14], for GaAs FETs ν ≤ 22 THz [12] and for SBDs ν ≤ 10 THz [17]).…”

Section: -11mentioning

confidence: 99%

“…Typically, in Si MOSFETs r 1 and r 2 values are as follows: r 1 ~ 400 Ω·μm, r 2 ~ 40 Ω (e.g., in the 0.35 μm technology design rules), and in AlGaN/GaN HFETs the value r 2 < 0.5 Ω. To avoid power losses, the value of R S has to be smaller than the antenna radiation resistance R A,R (R A,R ~ 100…300 Ω (in dependence on the antenna type [14,23]). …”

Section: Thz Rectifying Detector Parametersmentioning

confidence: 99%

“…numbers in the list of Refs. The curves for different radiation frequencies were recalculated for the detector antenna area λ 2 /4π instead of smaller physical area of the patch antennas used for obtaining NEP opt in [14].…”

Section: Thz Rectifying Detector Parametersmentioning

confidence: 99%

“…Antenna impedance Z A = 300...300⋅j Ω [14] was taken for patch antenna. Calculations were fulfilled for the optimal NEP opt channel width, which is dependent on the radiation frequency, as it is shown in Fig.…”

Section: Thz Rectifying Detector Parametersmentioning

confidence: 99%

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Untitled

2016

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. Performance limits of uncooled unbiased field effect transistors (FETs) and Schottky-barrier diodes (SBDs) as direct detection rectifying terahertz (THz) detectors operating in the broadband regime have been considered in this paper. Some basic extrinsic parasitics and detector-antenna impedance matching were taken into account. It has been concluded that, in dependence on radiation frequency, detector and antenna parameters, the ultimate optical responsivity (ℜ opt ) and optical noise equivalent power (NEP opt ) of FETs in the broadband detection regime can achieve ℜ opt ~ 23 kV/W and NEP opt ~ 1⋅10-12 W/Hz 1/2 , respectively. At low radiation frequency ν in the THz spectral region the NEP opt of SBD detectors can be better by a factor of ~1.75 as compared to that of Si MOSFETs (metal oxide semiconductor FETs) and GaAlN/GaN HFETs (heterojunction FETs) with comparable device impedances.

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“…The optimum NEP opt is also shifted to better (lower) values with the antenna resistance R A,R shift from R A,R = 100 Ω for dipole antenna up to R A,R = 300 Ω [14,23] for patch antenna.…”

Section: Thz Rectifying Detector Parametersmentioning

confidence: 98%

Section: -11mentioning

confidence: 99%

Section: Thz Rectifying Detector Parametersmentioning

confidence: 99%

Section: Thz Rectifying Detector Parametersmentioning

confidence: 99%

Section: Thz Rectifying Detector Parametersmentioning

confidence: 99%

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Untitled

2016

Semicond. Phys. Quantum Electron. Optoelectron.

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Terahertz Radiation Detectors Using CMOS Compatible SOI Substrates

Hasan,

Khan,

Shahzadi

et al. 2024

Adv Funct Materials

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In recent years, silicon‐based room temperature Terahertz (THz) detectors have become the most optimistic research area because of their high speed, low cost, and unimpeded compatibility with mainstream complementary metal‐oxide‐semiconductor (CMOS) device technologies. However, Silicon (Si) suffers from low responsivity and high noise at THz frequencies. In this review, the recent advances in Si‐based THz detectors using silicon‐on‐insulator (SOI) substrates are presented. These offer several advantages over bulk counterparts, such as reduced parasitic capacitance, enhanced electric field confinement, and improved thermal isolation. The different types of THz detectors exploiting SOI substrate, such as conventional metal‐oxide‐semiconductor field effect transistors (MOSFETs), junction‐less MOSFETs, junction‐less nanowires field effect transistors (JLNWFETs), micro‐electromechanical system (MEMS), metal‐semiconductor‐metal (MSM) structures, and single electron transistor (SET), are discussed, and their key performances in terms of responsivity, noise equivalent power (NEP), bandwidth, and dynamic range are compared. The challenges and opportunities for further improvement of SOI THz detectors, such as device scaling, integration, and modulation, are also highlighted. This review may offer compelling evidence supporting the idea that SOI THz detectors have the potential to facilitate high performance, low power consumption, and scalability—qualities essential for advancing next‐level technologies.

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Exploiting Total Internal Reflection Geometry for Terahertz Devices and Enhanced Sample Characterization

Sun

Chen

et al. 2019

Advanced Optical Materials

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To promote potential applications of terahertz (THz) technology, more advanced functional THz devices with high performance are needed, including modulators, polarizers, lenses, wave retarders, and antireflection coatings. This work summarizes recent progress in THz components built on functional materials including graphene, vanadium dioxide, and metamaterials. The key message is that, while the choice of materials used in such devices is important, the geometry in which they are employed also has a significant effect on the performance achieved. In particular, devices operating in total internal reflection geometry are reviewed, and it is explained how this geometry is able to be exploited to achieve a variety of THz devices with broadband operation.

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Exploration of Terahertz Imaging with Silicon MOSFETs

Cited by 95 publications

References 43 publications

Untitled

Untitled

Terahertz Radiation Detectors Using CMOS Compatible SOI Substrates

Exploiting Total Internal Reflection Geometry for Terahertz Devices and Enhanced Sample Characterization

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