Exploration of key physical properties of Sanakaranarayan - Ramasamy (SR) grown GZS single crystal for optoelectronic applications

Ganesh, V.; Shkir, Mohd.; AlFaify, S.

doi:10.1016/j.ijleo.2018.10.158

Cited by 3 publications

(3 citation statements)

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“…In some other publications, E g of pure GZS crystal has slightly different values. The differences in E g value in those works can be explained by the differences in crystal growth conditions from one work to another [7,10,22,25,26]. These conditions are equivalent in the present work and in the work of Nithya et al [17].…”

Section: Optical Band Gap Energymentioning

confidence: 51%

“…In growing GZS single crystal by using Sanakaranarayan -Ramasamy (SR) technique and studying by physical properties for optoelectronic applications, it was found that the grown crystal has 80% transparency in the wavelength range of 300-950 nm. They confirmed the application of GZS in NLO devices and they reported that the direct E g = 4.6 eV [10].…”

Section: Introductionmentioning

confidence: 56%

“…Recently, linear and nonlinear optical properties of glycine zinc sulfate (GZS) crystal have attracted the attention of many researchers [10,25,26]. Vijayalakshmi and Dhanasekaran [25] grew single crystals of different molar ratios of ZnSO 4 -added glycine by using the slow evaporation method.…”

Section: Introductionmentioning

confidence: 99%

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Effect of copper doping on the optical and dielectric parameters of glycine zinc sulfate (GZS) single crystals

Abdulwahab,

Qaidb,

Ali

et al. 2021

Univ. Aden J. Nat. and Appl. Sc.

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Glycine zinc sulfate (GZS) single crystals pure and doped with copper were grown by the slow evaporation of aqueous solutions at constant temperature (307 K). Cu/Zn molar ratios were 1%, 2% and 3% in the growth solutions. The optical reflectance was measured for pure and doped crystals (GZS:Cu) and it was used to calculate several optical and dielectric parameters. The direct optical band gap energy was found to be 5.44 eV for pure GZS crystal and it decreased as Cu/Zn molar ratio increased. The band tailing was studied for GZS:Cu crystals by using Urbach relation. The normal dispersion was investigated for GZS:Cu crystals by using both Wemplee–Di-Domenico and Cauchy-Sellmaier models. The real and imaginary parts of the complex dielectric constant of GZS:Cu crystals were calculated. Urbach parameters, normal dispersion parameters and dielectric parameters of GZS:Cu crystals were calculated in the present work for the first time. It was found that doping GZS crystal, with copper, affects the values of its optical and dielectric parameters and improves its electrical conduction.

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