Exploration of Ba3N2 flux for GaN single-crystal growth

Bao, H.Q.; Li, H.; Wang, G.; Song, Bo; Wang, W.J.; Chen, X.L.

doi:10.1016/j.jcrysgro.2008.02.023

Cited by 9 publications

(9 citation statements)

References 24 publications

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“…Ba 3 N 2 , Ca 3 N 2 , Li 3 N, and some combinations thereof are all reported to have produced single-crystal GaN at some level. 66,[68][69][70] The results in Ba 3 N 2 were perhaps the least impressive with tens of microns in size. However, many of the Ca-, Li-, and Ca-Li-fluxes produced optically clear crystals with sizes up to 4 mm.…”

Section: Flux Growthmentioning

confidence: 99%

“…On the topic of other flux chemistries for growth of GaN, the early and mid‐2000s saw a wide variety of flux compositions. Ba 3 N 2 , Ca 3 N 2 , Li 3 N, and some combinations thereof are all reported to have produced single‐crystal GaN at some level 66,68–70 . The results in Ba 3 N 2 were perhaps the least impressive with tens of microns in size.…”

Section: Flux Growthmentioning

confidence: 99%

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Prospective view of nitride material synthesis

Stoddard

Pimputkar

2023

Int J Ceramic Engine & Sci

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The field of nitride‐based materials is producing some of the most promising and interesting candidates for advanced technology applications. Novel formulations and polymorphs are of interest for applications requiring one or more of: high hardness, high oxygen resistance at elevated temperatures, catalytic action, semiconductor light sources, and (ultra‐)wide band gap electronics. The synthesis of nitrides with excellent single crystal structural quality of an appreciable size is challenging whether working in solution growth techniques like ammonothermal and flux growth, or in vapor deposition techniques. This paper presents a perspective on recent developments in equipment and techniques for single crystal nitride synthesis with a view toward progress anticipated in the next 5–10 years.

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Section: Flux Growthmentioning

confidence: 99%

Section: Flux Growthmentioning

confidence: 99%

Prospective view of nitride material synthesis

Stoddard

Pimputkar

2023

Int J Ceramic Engine & Sci

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“…During the past decade, we tried to develop a new route based on the flux to grow bulk GaN single crystals under moderate conditions 70–86. It has been successfully demonstrated that transparent, quality GaN crystals with sizes up to 4 mm can be grown by using lithium and alkaline earth nitrides flux method.…”

Section: Gan Single‐crystal Growthmentioning

confidence: 99%

“…The sizes and typical morphologies of GaN single crystals grown by Li 3 N 73, 77, Ca 3 N 2 80, and Ba 3 N 2 84 fluxes are schematically illustrated in Fig. 15.…”

Section: Gan Single‐crystal Growthmentioning

confidence: 99%

Single‐crystal growth: From new borates to industrial semiconductors

Wang

Chen

2010

Physica Status Solidi (a)

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In this paper, we present our progresses on single‐crystal growth of a variety of compounds from new borates to industrial semiconductors, reflecting our efforts in new compounds exploration, structure analysis, property characterization, flux growth, and vapor growth of industrial semiconductors. Typical examples are selected with each serving to show one theme. YBa3B9O18 and ErBa3B9O18, two members of a newly discovered series RBa3B9O18 (R = Y, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb) are found to be potential scintillation materials and laser hosts. KZnB3O6, the first borate with edge‐sharing BO4 tetrahedra obtained under ambient conditions, shows a very interesting selective ion exchange. The study of a well‐known crystal YVO4 reveals that the negative refraction (NR) is an intrinsic property of all uniaxial crystals. For technically important crystals, our emphases are placed on the study of growth methods. GaN is successfully realized to grow under very facile conditions based on a flux method developed from combining the phase relation calculation and experiments. Achievements on growth of 2–4 inch quality SiC wafers, both semi‐insulating and conducting, through improved physical vapor transport (PVT) method are also reported. A brief summary and our perspectives on crystal growth are given at the end. 2–4‐inch n‐type 4H‐SiC wafers grown by a PVT method.

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“…121 Secondly, Chen et al The researchers conjectured that this type of morphology was a result of an unbalance growth of the non-polar face. 122 The use of different nitride fluxes has been proven to be advantageous for different purposes. Nonetheless, their use at low pressures is limited by their decomposition temperature/pressure.…”

Section: Nitride Fluxmentioning

confidence: 99%

Plasma-assisted liquid phase epitaxy of gallium nitride using molten gallium.

Jaramillo-Cabanzo¹

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I would like to acknowledge the staff at the Conn Center for Renewable Energy Research and the Chemical Engineering department. A special acknowledgment is made to Dr. William Paxton who always was willing to help me. I would also like to thank all my lab mates from whom I never stopped learning. My experience at the University of Louisville would not have been the same without them. I am very grateful to my friends for always letting me know that they are there for me. Specially, I would like to thank Alejandro Martinez for looking out for me, and Lisa Michelson for making my life easier. Lastly, I would like to express my deepest gratitude to my family for their unconditional love and for supporting me in whatever I do.

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Exploration of Ba3N2 flux for GaN single-crystal growth

Cited by 9 publications

References 24 publications

Prospective view of nitride material synthesis

Prospective view of nitride material synthesis

Single‐crystal growth: From new borates to industrial semiconductors

Plasma-assisted liquid phase epitaxy of gallium nitride using molten gallium.

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