Exploiting multiple percolation in two-terminal memristor to achieve a multitude of resistive states

Foulger, Stephen H.; Bandera, Yuriy; Grant, Benjamin; Vilčáková, Jarmila; Sáha, Petr

doi:10.1039/d1tc00987g

Cited by 10 publications

(12 citation statements)

References 78 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…under highlevel noise dominate the relatively quick deterioration in the hardware situation. Therefore, the improvement of resistive states and uniformity of the memristor devices could further improve the system robustness 52 . It is noteworthy that the recognition accuracy of the hardware experiment still maintains above 90% under 15% noise level.…”

Section: Fingerprint Recognition With Fully-hardware Duv In-sensor Rc...mentioning

confidence: 99%

In-sensor reservoir computing system for latent fingerprint recognition with deep ultraviolet photo-synapses and memristor array

et al. 2022

View full text Add to dashboard Cite

Detection and recognition of latent fingerprints play crucial roles in identification and security. However, the separation of sensor, memory, and processor in conventional ex-situ fingerprint recognition system seriously deteriorates the latency of decision-making and inevitably increases the overall computing power. In this work, a photoelectronic reservoir computing (RC) system, consisting of DUV photo-synapses and nonvolatile memristor array, is developed to detect and recognize the latent fingerprint with in-sensor and parallel in-memory computing. Through the Ga-rich design, we achieve amorphous GaOx (a-GaOx) photo-synapses with an enhanced persistent photoconductivity (PPC) effect. The PPC effect, which induces nonlinearly tunable conductivity, renders the a-GaOx photo-synapses an ideal deep ultraviolet (DUV) photoelectronic reservoir, thus mapping the complex input vector into a dimensionality-reduced output vector. Connecting the reservoirs and a memristor array, we further construct an in-sensor RC system for latent fingerprint identification. The system maintains over 90% recognition accuracy for latent fingerprint within 15% stochastic noise level via the proposed dual-feature strategy. This work provides a subversive prototype system of DUV in-sensor RC for highly efficient recognition of latent fingerprints.

show abstract

Section: Fingerprint Recognition With Fully-hardware Duv In-sensor Rc...mentioning

confidence: 99%

In-sensor reservoir computing system for latent fingerprint recognition with deep ultraviolet photo-synapses and memristor array

et al. 2022

View full text Add to dashboard Cite

show abstract

“…It is worth mentioning that the accuracy could be further improved by optimizing the weight tuning schemes of increasing analog states, as well as device structure engineering to achieve a higher non‐linearity factor. [ 58 ] Nonetheless, the initial results prove the potential of our RRAM as an analog memory and provide a pathway to achieve better performance.…”

Section: Resultsmentioning

confidence: 88%

Improved Performance of Hf_xZn_yO‐Based RRAM and its Switching Characteristics down to 4 K Temperature

Lan

Chen

et al. 2023

Adv Elect Materials

View full text Add to dashboard Cite

The search for high‐performance resistive random‐access memory (RRAM) devices is essential to pave the way for highly efficient non‐Von Neumann computing architecture. Here, it is reported on an alloying approach using atomic layer deposition for a Zn‐doped HfOx‐based resistive random‐access memory (HfZnO RRAM), with improved performance. As compared with HfOx RRAM, the HfZnO RRAM exhibits reduced switching voltages (>20%) and switching energy (>3×), as well as better uniformity both in voltages and resistance states. Furthermore, the HfZnO RRAM exhibits stable retention exceeding 10 years, as well as write/erase endurance exceeding 105 cycles. In addition, excellent linearity and repeatability of conductance tuning can be achieved using the constant voltage pulse scheme, achieving ≈90% accuracy in a simulated multi‐layer perceptron network for the recognition of modified national institute of standards and technology database handwriting. The HfZnO RRAM is also characterized down to the temperature of 4 K, showing functionality and the elucidation of its carrier conduction mechanism. Hence, a potential pathway for doped‐RRAM to be used in a wide range of temperatures including quantum computing and deep‐space exploration is shown.

show abstract

Section: Resultsmentioning

confidence: 99%

“…35 For comparison, the electrochemical properties of poly(4-(6-hexyl)-4H-dithieno[3,2-b:2 ′ ,3 ′ -d]pyrrole) (p6DTP) have been recently presented and the IP of p6DTP is 4.4 eV, a value similar to reported energy levels in some N-substituted alkyl and alkyl ether polyDTPs. [36][37][38] Fig. 2a presents the 1st cyclic voltammogram of the DTPNap monomer in a dichloro-methane/0.1 M TBAPF 6 electrolyte and is relatively featureless in comparison to the initial cyclic voltammogram of the AlkyneDTP monomer (cf.…”

Section: Electropolymerizationmentioning

confidence: 99%

See 1 more Smart Citation

Synthesis, electropolymerization and functionalization via click chemistry of N-alkynylated dithieno[3,2-b:2′,3′-d]pyrrole

et al. 2022

Self Cite

View full text Add to dashboard Cite

show abstract

Exploiting multiple percolation in two-terminal memristor to achieve a multitude of resistive states

Abstract: As the most likely prospect for the construction of neuromorphic networks, the emulation of synaptic responses with memristors has attracted attention in both the microelectronic industries and the academic environment....

Cited by 10 publications

References 78 publications

In-sensor reservoir computing system for latent fingerprint recognition with deep ultraviolet photo-synapses and memristor array

In-sensor reservoir computing system for latent fingerprint recognition with deep ultraviolet photo-synapses and memristor array

Improved Performance of Hf_xZn_yO‐Based RRAM and its Switching Characteristics down to 4 K Temperature

Synthesis, electropolymerization and functionalization via click chemistry of N-alkynylated dithieno[3,2-b:2′,3′-d]pyrrole

Contact Info

Product

Resources

About

Exploiting multiple percolation in two-terminal memristor to achieve a multitude of resistive states

Abstract: As the most likely prospect for the construction of neuromorphic networks, the emulation of synaptic responses with memristors has attracted attention in both the microelectronic industries and the academic environment....

Cited by 10 publications

References 78 publications

In-sensor reservoir computing system for latent fingerprint recognition with deep ultraviolet photo-synapses and memristor array

In-sensor reservoir computing system for latent fingerprint recognition with deep ultraviolet photo-synapses and memristor array

Improved Performance of HfxZnyO‐Based RRAM and its Switching Characteristics down to 4 K Temperature

Synthesis, electropolymerization and functionalization via click chemistry of N-alkynylated dithieno[3,2-b:2′,3′-d]pyrrole

Contact Info

Product

Resources

About

Improved Performance of Hf_xZn_yO‐Based RRAM and its Switching Characteristics down to 4 K Temperature