2020
DOI: 10.1007/978-3-030-52017-5_21
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Exploiting Memory Resilience for Emerging Technologies: An Energy-Aware Resilience Exemplar for STT-RAM Memories

Abstract: Due to the consistent pressing quest of larger on-chip memories and caches of multicore and manycore architectures, Spin Transfer Torque Magnetic RAM (STT-MRAM or STT-RAM) has been proposed as a promising technology to replace classical SRAMs in near-future devices. Main advantages of STT-RAMs are a considerably higher transistor density and a negligible leakage power compared with SRAM technology. However, the drawback of this technology is the high probability of errors occurring especially in write operatio… Show more

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Cited by 2 publications
(1 citation statement)
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“…As mentioned previously, STT-MRAM exhibits an energyconsuming write operation, prompting researchers to explore solutions for this issue. This section investigates STT-MRAM studies that try to lower energy consumption by avoiding energy-consuming write operations [16].…”
Section: A Write Energy Of Stt-mram Cellmentioning
confidence: 99%
“…As mentioned previously, STT-MRAM exhibits an energyconsuming write operation, prompting researchers to explore solutions for this issue. This section investigates STT-MRAM studies that try to lower energy consumption by avoiding energy-consuming write operations [16].…”
Section: A Write Energy Of Stt-mram Cellmentioning
confidence: 99%