Exploiting Ambipolarity in Graphene Field‐Effect Transistors for Novel Designs on High‐Frequency Analog Electronics

Abstract

Exploiting ambipolar electrical conductivity based on graphene field‐effect transistors has raised enormous interest for high‐frequency (HF) analog electronics. Controlling the device polarity, by biasing the graphene transistor around the vertex of the V‐shaped transfer curve, enables to redesign and highly simplify conventional analog circuits, and simultaneously to seek for multifunctionalities, especially in the HF domain. This study presents new insights for the design of different HF applications such as power amplifiers, mixers, frequency multipliers, phase shifters, and modulators that specifically leverage the inherent ambipolarity of graphene‐based transistors.

Analysis of a Graphene FET-Based Frequency Doubler for Combined Sensing and Modulation through Compact Model Simulation

“…The adopted mode was presented in [26] and validated in [27]. The model reproduced successfully the non linear behaviour of GFET-based ambipolar components for RF applications [28][29][30], prov ing to be a valuable tool for the purpose of predicting the GFET frequency doubler's per formance. The device model considered in our simulations is the top-gated graphene FE described in [19].…”