Exploitation of surface selective growth in metalorganic growth technologies for device applications

Native-oxide-based selective area growth of InP nanowires via metal–organic molecular beam epitaxy mediated by surface diffusion

“…Epitaxial growth is then due to direct impingement of precursors on the unmasked surface. This is in contrast to selective area MOVPE, where the metal-organic precursors travel to the growth site also by lateral gas phase diffusion [18,19].…”

Selective growth of CdTe on Si and GaAs substrates using metalorganic vapor phase epitaxy

“…12 In order to establish growth conditions that promote perfect selective growth of CdTe on Si and GaAs substrates, different mask materials were investigated in this study. Generally the selectivity can be improved by increasing the growth temperature and by reducing the growth pressure.…”

Mixed alkyl exchange and exploitable surface interactions in InGaN by NH3-based metal organic molecular beam epitaxy

“…This eliminates solid-source replacement downtime and consumption driven, slow flux variation of MBE, while drastically reducing the quantity of expensive and toxic precursors consumed in MOCVD. Moreover, MOMBE may be better suited for selective epitaxy that may be necessary for the economical realization of novel, three-dimensional device structures incorporating features such as lateral bandgap energy modulation [4]. This is due to the variety of sensitive growth mechanisms that may be manipulated in MOMBE, including metal organic surface adsorption and reaction, surface diffusion, lattice incorporation, and desorption.…”