Explicit continuous charge-based compact model of surrounding gate MOSFET (SRGMOSFET) with smooth transition between partially-depleted to fully-depleted operation
Abstract:A charge-based compact model that includes the dynamic depletion behavior for arbitrary doped surrounding gate MOSFET (SRGMOSFET) is presented in this paper. The one-dimensional Poisson's equation is first solved to obtain the continuous explicit solution of the mobile charge density and drain current expression. A smooth transition between partially-depleted (PD) and fully-depleted (FD) regions of the channel potential is then obtained by using perturbation approach in deriving its corrected surface potential… Show more
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