Explicit Analytical Charge and Capacitance Models of Undoped Double-Gate MOSFETs

Moldovan, Oana; Jiménez, David; Guitart, Jaume Roig; Chaves, Ferney A.; Iñı́guez, Benjamı́n

doi:10.1109/ted.2007.899402

Cited by 76 publications

(34 citation statements)

References 13 publications

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“…On the other hand, the drain current model used in formula (1) is based on a previous DGMOSFET charge control model presented in [28]. This model works well for the FinFETs under study here, since the contribution of the inversion charge under the top gate is low in comparison with the charge associated with the side gates.…”

Section: Thermal Resistance and Device Temperature Modellingmentioning

confidence: 99%

DC self-heating effects modelling in SOI and bulk FinFETs

González

Roldán

Iñı́guez

et al. 2015

Microelectronics Journal

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Section: Thermal Resistance and Device Temperature Modellingmentioning

confidence: 99%

DC self-heating effects modelling in SOI and bulk FinFETs

González

Roldán

Iñı́guez

et al. 2015

Microelectronics Journal

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“…The drain current model used here is based on the charge control model presented in [6]. Thus, the inversion charge can be calculated as in (5), where ȕ is the thermal voltage, Q o = 4ȕC Si (C Si = İ Si /t Si ), C ox = İ ox /t ox and V th and ΔV th are given in [6].…”

Section: Drain Current Modelmentioning

confidence: 99%

“…Thus, the inversion charge can be calculated as in (5), where ȕ is the thermal voltage, Q o = 4ȕC Si (C Si = İ Si /t Si ), C ox = İ ox /t ox and V th and ΔV th are given in [6].…”

Section: Drain Current Modelmentioning

confidence: 99%

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An advanced drain current model for DGMOSFETs including self-heating effects

González

Iñı́guez

Lázaro

et al. 2012

2012 8th International Caribbean Conference on Devices, Circuits and Systems (ICCDCS)

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An advanced drain current model for symmetrical Double-Gate MOSFETs (DGMOSFETs), including short channel, velocity saturation and self-heating effects, is presented. The temperature dependence of the low-field mobility, saturation velocity and inversion charge is analyzed and accurately included in the model. Self-heating is considered through the thermal resistance of the device, which is estimated in two ways: from an equivalent thermal circuit and from numerical output characteristic curves, obtained with a commercial TCAD tool (Sentaurus by Synopsys), and fitted with a drain current model. The validity of the model is checked by comparing with simulation results, for the typical bias range used in integrated circuits.

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“…(14), positive sign before the mobility term has been assumed. The differential charge-voltage equation in a DG MOSFET can be expressed [23] as…”

Section: Determination Of the Flicker Noisementioning

confidence: 99%