Experiments on Ge-GaAs heterojunctions

Anderson, R. L.

doi:10.1016/0038-1101(62)90115-6

Cited by 1,044 publications

(248 citation statements)

References 5 publications

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“…Our band alignments can be compared directly to the prediction of Anderson's electron affinity rule, which states that the conduction band offset (A£ c ) would then be given by the difference in electron affinity of the two semiconductors, while the valence band offset (A£ v ) is given by the difference between the band-gap difference and the conduction band offset [31]. The electron affinity of the CuGaS 2 is about 4.1 eV [32], for the CuAlSe 2 is 3.8 eV [32], and for the CdS, ZnSe and ZnS are 4.3 eV [33], 4.09 eV [33], and 3.9 eV [34], respectively.…”

Section: Resultsmentioning

confidence: 99%

Electronic band alignment at CuGaS2 chalcopyrite interfaces

Castellanos-Águila

Palacios

Conesa

et al. 2016

Computational Materials Science

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Cu-chalcopyrite semiconductors are commonly used as light absorbing materials on solar cell devices. The study of the heterointerfaces between the absorbent and the contact materials is crucial to understand their operation. In this study, band alignments of the heterojunctions between CuGaS 2 chalcopyrite and different semiconductors have been theoretically obtained using density functional theory and more advanced techniques. Band alignments have been determined using the average electrostatic potential as reference level. We have found that the strain in the heterointerfaces plays an important role in the electronic properties of the semiconductors employed here. In this work CuAlSe 2 /CuGaS 2 and CuGaS 2 /ZnSe heterointerfaces show band alignments where holes and electrons are selectively transferred through the respective heterojunctions to the external contacts. This condition is necessary for their application on photovoltaic devices.

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Section: Resultsmentioning

confidence: 99%

Electronic band alignment at CuGaS2 chalcopyrite interfaces

Castellanos-Águila

Palacios

Conesa

et al. 2016

Computational Materials Science

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“…II-VI/Zn 3 P 2 band offsets-Measurement versus prediction Figure 5 compares the measured band alignments for the II-VI/Zn 3 P 2 heterojunctions with the values predicted by various approaches including the Anderson electron affinity (EA) model, 16 an interface dipole model, 44 and available DFT calculations. 45 The plotted Zn 3 P 2 CBM was fixed at À3.6 eV with respect to the vacuum level, based on a reported value of the Zn 3 P 2 electron affinity (v).…”

Section: Discussionmentioning

confidence: 99%

“…Notably, the barrier heights measured for the heterojunctions are not in good agreement with those predicted from Anderson band alignment theory based on the electron affinities of the materials used to form the junction. 16 This disagreement is not unexpected because the actual band offsets often deviate from the ideal values. 17 To understand the fundamental limitations on the attainable barrier heights of Zn 3 P 2 heterojunction solar cells, we describe herein band alignment measurements on heterovalent interfaces composed of n-type II-VI semiconductors grown on the Zn 3 P 2 (001) surface.…”

Section: Introductionmentioning

confidence: 99%

Energy-band alignment of II-VI/Zn3P2 heterojunctions from x-ray photoemission spectroscopy

Bosco

Scanlon

Watson

et al. 2013

Journal of Applied Physics

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The energy-band alignments for zb-ZnSe(001)/a-Zn 3 P 2 (001), w-CdS(0001)/a-Zn 3 P 2 (001), and w-ZnO(0001)/a-Zn 3 P 2 (001) heterojunctions have been determined using high-resolution x-ray photoelectron spectroscopy via the Kraut method. Ab initio hybrid density functional theory calculations of the valence-band density of states were used to determine the energy differences between the core level and valence-band maximum for each of the bulk materials. The ZnSe/Zn 3 P 2 heterojunction had a small conduction-band offset, DE C , of À0.03 6 0.11 eV, demonstrating a nearly ideal energy-band alignment for use in thin-film photovoltaic devices. The CdS/Zn 3 P 2 heterojunction was also type-II but had a larger conduction-band offset of DE C ¼ À0.76 6 0.10 eV. A type-III alignment was observed for the ZnO/Zn 3 P 2 heterojunction, with DE C ¼ À1.61 6 0.16 eV indicating the formation of a tunnel junction at the oxide-phosphide interface. The data also provide insight into the role of the II-VI/Zn 3 P 2 band alignment in the reported performance of Zn 3 P 2 heterojunction solar cells. V C 2013 AIP Publishing LLC. [http://dx

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“…11 The band alignment between two semiconductors is believed to be controlled in part by charge transfer across the interface which results in the creation of interface dipoles. This dipole modifies the barrier heights given by the electron affinity rule, 24 which is basically the difference between the electronegativities screened by a factor which depends on the electronic component of the dielectric constant. In the case of HfO 2 , the bulk CNL lies above the Fermi level of the p-doped silicon substrate (in other words the electronegativity of HfO 2 is smaller than that of the silicon substrate).…”

Section: G Electrostatic Potential Across the Gate Stackmentioning

confidence: 99%

Band alignment issues related to HfO2∕SiO2∕p-Si gate stacks

Sayan

Emge

Garfunkel

et al. 2004

Journal of Applied Physics

103

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The valence and conduction band densities of states for the HfO 2 / SiO 2 / Si structure are determined by soft x-ray photoemission and inverse photoemission. First principles calculations are used to help in assigning valence band maxima and conduction band minima. The energies of defect states at the band edges are estimated by comparing the theoretical and experimental results. Determinations of the local surface potentials before and after a forming gas anneal are used to help determine the possible location of the charge in the film.

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Experiments on Ge-GaAs heterojunctions

Cited by 1,044 publications

References 5 publications

Electronic band alignment at CuGaS2 chalcopyrite interfaces

Electronic band alignment at CuGaS2 chalcopyrite interfaces

Energy-band alignment of II-VI/Zn3P2 heterojunctions from x-ray photoemission spectroscopy

Band alignment issues related to HfO2∕SiO2∕p-Si gate stacks

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