Abstract:The temperatures before and during the breakdown (switching) in planar Ag-Cu,O-Ag structures were determined experimentally. They were measured by means of liquid crystals and thermo-chromatic cryons as temperature indicators as wcll as measuring the intensity distribution of the emitted IR radiation. Structural changes during electrical switching were observed using a slow-motion camera. The formation of the switching channel and the movement of the liquid phase in i t were observcd. The results show that the… Show more
The current-voltage-characteristics and the temperature dependence of the thermopower and of the resistivity are measured on Cu,O bistable switching elenients in the lowresistance state. The behaviour of the low-resistance state is essentially determined by narrowings of a quasi-nietallic copper filament. The narrowings result from the contact of copper particles inside the Cu,O matrix. The behaviour of return switching into the highresistance state may be deduced from the structure of the filaments. The statistical fluctuations of the switching parameters are explained by the properties of the onswitching and off-switching process.
The current-voltage-characteristics and the temperature dependence of the thermopower and of the resistivity are measured on Cu,O bistable switching elenients in the lowresistance state. The behaviour of the low-resistance state is essentially determined by narrowings of a quasi-nietallic copper filament. The narrowings result from the contact of copper particles inside the Cu,O matrix. The behaviour of return switching into the highresistance state may be deduced from the structure of the filaments. The statistical fluctuations of the switching parameters are explained by the properties of the onswitching and off-switching process.
Amorphous Cd–Sb films with a Cd content of about 20% can be switched from a high-resistance state to a low-resistance state by the application of a dc or pulsed bias. Microanalysis of the switched region and observation of the growth of the dendritic filament from the negative electrode suggest that the migration of Cd ions is responsible for forming a conducting channel in the memory switching. The mechanism of the memory switching is explained as follows. First, a Cd speckle appears at the negative electrode, and then Cd dendrite develops from it. When the Cd dendrite just bridges both electrodes, a large current flows and the thermal effect extends to the surrounding region, creating a channel.
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