Experimental test and life estimation of the OLED at normal working stress based on the luminance degradation model

Zhang, J. P.; Wang, C.; Chen, X.; Cheng, Guoliang; Qiu, Yong; Shen, M.-H. Herman

doi:10.1002/bio.2741

Cited by 10 publications

(8 citation statements)

References 12 publications

(12 reference statements)

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“…Many commercial products are now available. [7][8][9] It is well known that the charge-carrier mobility is one of the key parameters to determine the device effi ciency, not only for balancing the charges for higher quantum effi ciency, but also for engineering the emission zone to achieve a suitable emission spectrum. [ 10,11 ] wileyonlinelibrary.com carrier mobility.…”

Section: Introductionmentioning

confidence: 99%

Probing Bulk Transport, Interfacial Disorders, and Molecular Orientations of Amorphous Semiconductors in a Thin‐Film Transistor Configuration

Sit

Cheung

Chan

et al. 2016

Adv Elect Materials

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Thin film transistors (TFTs) can be used to determine the bulk‐like mobilities of amorphous semiconductors. Different amine‐based organic hole transporting materials (HTs) used in organic light‐emitting diodes have been investigated. In addition, the present study also measures the TFT hole mobilities of two iridium phosphors: Ir(ppy)3 and Ir(piq)3. These materials are grown separately on SiO2 and polystyrene (PS). On SiO2, the TFT mobilities are found to be 1–2 orders smaller than the bulk values obtained by time‐of‐flight (TOF) technique. On PS gate dielectric layer, the TFT mobilities are in good agreement TOF data. Only 10 nm of organic semiconductor is sufficient for TFTs to achieve TOF mobilities. Using the Gaussian disorder model, it is found that on SiO2 surface, when compared to the bulk values, the energetic disorders (s) of the HTs increase and simultaneously, the high temperature limits (µ∞) of the carrier mobilities decrease. Both s and µ∞ contribute to the reduction of the carrier mobility. The increase in s is related to the presence of randomly oriented polar Si‐O bonds. The reduction of µ∞ on SiO2 is related to the orientations of the more planar molecules which tend to lie horizontally on the surface.

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Section: Introductionmentioning

confidence: 99%

Probing Bulk Transport, Interfacial Disorders, and Molecular Orientations of Amorphous Semiconductors in a Thin‐Film Transistor Configuration

Sit

Cheung

Chan

et al. 2016

Adv Elect Materials

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“…It is evident that the OLED luminance gradually decreases with time and the decrease rate is proportional to the initial luminance. The coulomb aging model has deviations compared to the actual decay in case of high luminance, while the SED model can accurately fit the luminance decay curve of OLED in the whole range of luminance [9], [19]. Therefore, after comparing the two typical luminance decay models, the SED model is chosen to fit luminance decay curve:…”

Section: A Luminance Degradation Modelmentioning

confidence: 99%

“…OLED lifetime estimation based on mathematical modeling has been studied. For example, lifetime estimation based on Weibull distribution and experimental test has been studied [18], [19]. However, this method is not conductive to obtain the aging status of OLED in real time.…”

Section: Introductionmentioning

confidence: 99%

Luminance Compensation and Optimization to Delay OLED Degradation Based on Equivalent Lifetime Detection

Fan

Zhang

2020

IEEE J. Electron Devices Soc.

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In this paper, luminance compensation and optimization without internal or external sensing circuits to delay OLED degradation based on equivalent lifetime detection is proposed. The proposed method can estimate the dynamic luminance degradation with the equivalent lifetime equation derived by converting display time of any OLED cell at different luminance to a reference display time at a certain luminance. According to the calculated equivalent lifetime, luminance compensation is carried out by increasing drive current. In order to obtain a better lifetime extension of the OLED, three key parameters, such as compensation iteration m, compensation goal value Lgoal, and compensation origin value Lorigin are optimized. Experimental results indicate that the relative error of dynamic luminance degradation estimation is about 2.2% with the proposed method. The lifetime of OLED cells can be prolonged by 32.64% with the optimized parameters m=5, Lorigin/L0=0.75, and Lgoal/L0=0.83.

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“…Conventional devices such as cathode ray tube (CRT), plasma display panel (PDP) and old type liquid crystal display (LCD) are regarded as low dynamic range (LDR) displays. Due to extended peak brightness that are associated with high dynamic range (HDR) capability of contents, some recent display devices are considered HDR displays [1][2][3][4][5][6][7]. With advances in display technologies, HDR capabilities of modern displays have become more and more significant since the features represent indicators for performance of HDR displays.…”

Section: Introductionmentioning

confidence: 99%

50‐2: Towards Modern Burn‐in Assessment Method for HDR Displays

Park

Kim

Jung

et al. 2019

Symp Digest of Tech Papers

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A novel burn-in assessment method is strongly required for modern high dynamic range (HDR) displays. Specifically, one of the necessary requirements for the new method is to stimulate a maximum capability of HDR displays such as a wide color gamut for all colors and a wide range of luminance. In this paper, based on the requirements, a new burn-in assessment method is proposed by employing steepest gradient weighted quantification metric. Experimental results and analysis are conducted for validating the proposed method. Author KeywordsOrganic light emitting device; high dynamic range; burn-in assessment; image sticking. 50-2 / J. S. Park

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Experimental test and life estimation of the OLED at normal working stress based on the luminance degradation model

Cited by 10 publications

References 12 publications

Probing Bulk Transport, Interfacial Disorders, and Molecular Orientations of Amorphous Semiconductors in a Thin‐Film Transistor Configuration

Probing Bulk Transport, Interfacial Disorders, and Molecular Orientations of Amorphous Semiconductors in a Thin‐Film Transistor Configuration

Luminance Compensation and Optimization to Delay OLED Degradation Based on Equivalent Lifetime Detection

50‐2: Towards Modern Burn‐in Assessment Method for HDR Displays

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