Experimental Study on Structural, Optical and Electrical Properties of Chemical Bath Deposited CdZnS Thin Films

Akh, Sabbir; Matin, Rummana; Bashar, Muhammad Shahriar; Kowsar, Abu; Rahaman, Md. Mizanur; Mahmood, Zahid

doi:10.4172/2090-4541.1000222

Cited by 11 publications

(2 citation statements)

References 13 publications

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“…The II-VI semiconductor compound thin films have been investigated for many years because of the multiple applications of these materials, in the field of solar cells, photocatalysts, field-effect transistors, light-emitting devices, and optoelectronic devices [1][2][3][4][5][6][7][8][9][10]. As buffer layer in solar cell, II-VI compounds, such as CdS [7,[11][12][13], ZnS [9,14,15], CdZnS [16][17][18][19][20], CdSe [21,22], CdSSe [23], etc., have been usually used. This binary/ternary compound thin film is reported to be synthesized by various techniques such as molecular beam epitaxy (MBE) [24], chemical bath deposition [5,15,25,26], sputtering [9,10,14,27,28], atomic layer deposition [29], etc.…”

Section: Introductionmentioning

confidence: 99%

Effect of rapid thermal annealing on structural and optical properties of ZnS thin films fabricated by RF magnetron sputtering technique

et al. 2019

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The ZnS thin films have been deposited by radio frequency magnetron sputtering at room temperature. Post-deposition rapid thermal annealing treatment was done for the films deposited at different powers ranging from 70 to 100 W. One peak is observed for as-deposited and annealed thin films at around 28.48° corresponding to the (111) reflection plane indicating a zincblende structure. The overall intensity of the peaks and the FWHM values of as-deposited films increased after annealing corresponding to the increase in crystallinity. The optical energy bandgap is found in the range of 3.24-3.32 eV. With increasing annealing temperature, the decrease in the Urbach energy values indicating a decrease in localized states which is in good agreement with the XRD results where the crystallinity increased. The surface morphology of the films seems to be composed of Nano-granules with a compact arrangement. Apparently, the grain size increases in the deposited films as annealing temperature increases. The compositional ratio attained close to the stoichiometric ratio of 1:1 after annealing. From the Hall effect measurement, the carrier concentration and mobility are found to increase after annealing. The high carrier concentration and mobility also comply with structural and optical analysis. Best results are found for the film annealed at 400 °C deposited at 90 W.

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Section: Introductionmentioning

confidence: 99%

Effect of rapid thermal annealing on structural and optical properties of ZnS thin films fabricated by RF magnetron sputtering technique

et al. 2019

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“…The Zn 1−x Mg x S thin film has drawn significant interest as a buffer layer in thin film photovoltaics in recent years. II-VI compounds, such as CdS [1][2][3][4], ZnS [5][6][7], CdZnS [8][9][10][11][12], etc., are commonly used as buffer layers. The bandgap of these films varies from 2.45 to 3.25 eV.…”

Section: Introductionmentioning

confidence: 99%

An Investigation on Structural and Optical Properties of Zn1−xMgxS Thin Films Deposited by RF Magnetron Co-Sputtering Technique

et al. 2020

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In this paper, Zn1−xMgxS thin films were co-sputtered on glass substrates using ZnS and MgS binary target materials under various applied RF power. The compositional ratio of Zn1−xMgxS films was varied by changing the RF power at an elevated temperature of 200 °C. The structural and optical properties were studied in detail. The structural analysis shows that the co-sputtered Zn1−xMgxS thin films have a cubic phase with preferred orientation along the (111) plane. The lattice constant and ionicity suggest the presence of a zincblende structure in Zn1−xMgxS thin films. Zn1−xMgxS thin films have transmittance over 76%. The extrapolation of optical characteristics indicates that direct bandgaps, ranging from 4.39 to 3.25 eV, have been achieved for the grown Zn1−xMgxS films, which are desirable for buffer or window layers of thin film photovoltaics.

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Deposition of Fe-CdZnS doped chalcogenide based thin films employing chemical bath deposition method: studies on microstructural morphology, optical, and electrical, properties for photovoltaic applications

Salem,

Mohammed,

Shumaran

et al. 2024

Appl. Phys. A

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Experimental Study on Structural, Optical and Electrical Properties of Chemical Bath Deposited CdZnS Thin Films

Cited by 11 publications

References 13 publications

Effect of rapid thermal annealing on structural and optical properties of ZnS thin films fabricated by RF magnetron sputtering technique

Effect of rapid thermal annealing on structural and optical properties of ZnS thin films fabricated by RF magnetron sputtering technique

An Investigation on Structural and Optical Properties of Zn1−xMgxS Thin Films Deposited by RF Magnetron Co-Sputtering Technique

Deposition of Fe-CdZnS doped chalcogenide based thin films employing chemical bath deposition method: studies on microstructural morphology, optical, and electrical, properties for photovoltaic applications

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