Experimental study of the surface tension of molten GaAs and its temperature dependence under controlled As-vapor pressure

Rupp, Robin; Müller, G.

doi:10.1016/0022-0248(91)90018-z

Cited by 23 publications

(6 citation statements)

References 11 publications

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“…This result is significantly lower than the expected equilibrium contact angle (35 ) [20], but is in excellent agreement with the range of values observed for h110i oriented seg- ments using scanning electron microscopy of rapidly quenched samples. This low value is consistent with enhanced surface segregation of As during droplet spreading, which lowers LV [16,21] to restore local equilibrium via Young's equation, SV LV cos t SL cos b (Fig. 2).…”

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confidence: 81%

Imaging Surface Topography using Lloyd’s Mirror in Photoemission Electron Microscopy

et al. 2007

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We use Lloyd's mirror to modulate electron photoemission in photoemission electron microscopy. This results in the projection of Lloyd's fringes on to three-dimensional (3D) surface objects. An iterative reconstruction method is used to correct for distortions in the fringe pattern due to the cathode immersion lens, thereby providing a quantitative interpretation of surface shape. It is therefore possible to extract 3D height information directly from a two-dimensional, plan-view image. The technique is of sufficient intensity and contrast to study real-time changes in surface topography and we apply the method to study unusual contact-line dynamics during the reactive wetting of metal droplets.

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supporting

confidence: 81%

Imaging Surface Topography using Lloyd’s Mirror in Photoemission Electron Microscopy

et al. 2007

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“…Surface tension [97] σ (N/m) 0.401-0.18  10 -3 ( [63,97] Melting temperature T melt (K) 1511 Latent heat of melting [95] L melt (J /m 3 )…”

Section: Experimental Protocolmentioning

confidence: 99%

Ultrafast dynamics and subwavelength periodic structure formation following irradiation of GaAs with femtosecond laser pulses

et al. 2018

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A theoretical investigation of the ultrafast processes and dynamics of the excited carriers upon irradiation of GaAs with femtosecond (fs) pulsed lasers is performed in conditions that induce material damage and eventually surface modification of the heated solid. A parametric study is followed to correlate the produced transient carrier density with the damage threshold for various pulse duration values τ p (it increases as ~0 .053 0.011  p  at relatively small values of τ p while it drops for pulse durations of the order of some picoseconds) based on the investigation of the fundamental multiscale physical processes following fs-laser irradiation. Moreover, fluence values for which the originally semiconducting material demonstrates a metallic behaviour are estimated. It is shown that a sufficient number of carriers in the conduction band are produced to excite Surface Plasmon (SP) waves that upon coupling with the incident beam and a fluid-based surface modification mechanism lead to the formation of sub-wavelength periodic structures orientated perpendicularly to the laser beam polarization. Experimental results for the damage threshold and the frequencies of induced periodic structures show a good agreement with the theoretical predictions.

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“…In advance of the D2‐GaAs microgravity experiments, several preparatory investigations, which were mainly carried out within the Ph.D. thesis of Roland Rupp, were needed, especially with respect to the free surface of the GaAs melt and the related capillary convection (so‐called Marangoni convection): Measurement of the surface tension of GaAs melt in dependence from the As vapor pressure by the sessile drop method Study of Marangoni convection in GaAs melt zones and the determination of the critical Marangoni number for the transition from steady to unsteady capillary convection in dependence from thermal boundary conditions Study of the impact of magnetic fields to suppress unsteady Marangoni convection …”

Section: Fundamental Studies Of Convective Phenomena In Melts and Thementioning

confidence: 99%

Erlangen—An Important Center of Crystal Growth and Epitaxy: Major Scientific Results and Technological Solutions of the Last Four Decades

Friеdrich

Müller

2019

Crystal Research and Technology

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This article describes the historic development of the Erlangen Crystal GrowthLaboratory CGL from its beginnings in 1974 at the chair of Materials of Electrical Engineering (Department of Material Science) of the University of Erlangen-Nuremberg until its current status as a large department "Materials" of the Erlangen Fraunhofer-Institute for Integrated Systems and Device Technology. Essential developments and scientific achievements in the various fields of crystal growth and epitaxy are presented from the early period until today.

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Experimental study of the surface tension of molten GaAs and its temperature dependence under controlled As-vapor pressure

Cited by 23 publications

References 11 publications

Imaging Surface Topography using Lloyd’s Mirror in Photoemission Electron Microscopy

Imaging Surface Topography using Lloyd’s Mirror in Photoemission Electron Microscopy

Ultrafast dynamics and subwavelength periodic structure formation following irradiation of GaAs with femtosecond laser pulses

Erlangen—An Important Center of Crystal Growth and Epitaxy: Major Scientific Results and Technological Solutions of the Last Four Decades

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