Experimental Study of Precursor Concentration the Co3O4 Thin Films Used as Solar Absorbers

This work deals with the preparation and characterization of pure and Nickel-doped porous Tin oxide (SnO2) thin films, using Spray pyrolysis technique for an eventual application in optoelectronics. The structural, morphological, optical, and electrical properties of these prepared samples were investigated using various techniques. X-ray diffraction analysis confirmed the tetragonal structure of pure SnO2 and Ni-doped films. The preferred orientation of the crystallites changed from (110) to (200) with the film doped at 15.3 at.% Ni, with crystallite size of about 10 and 18 nm for 15.3 at.% Ni-doped and 5.6 at.% Ni-doped SnO2, respectively. Scanning Electron Microscopy shows that the 15.3 at.% Ni-doped SnO2 film surface is relatively homogeneous, while the 5.6 at.% Ni-doped film is highly porous. The measured contact angles are less than 90° for all the prepared samples confirming the hydrophilic character of all the films. Transmittance as high as 85% in the visible region was observed for 5.6 at.% Ni-doped films, while lower transmittance is observed for 15.3 at.% Ni-doped films. A decrease of the optical band gap and the resistivity with increasing Ni dopant concentration were also observed.

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“…The strain values (ε) of SnO 2 film along the plane (110) were calculated using the following formula [21]:…”

Section: Resultsmentioning

confidence: 99%

“…Another important parameter, that characterizes the disorder of the material, is the Urbach energy. According to Urbach's law, the expression of the absorption coefficient is of the form [21]:…”

Section: Resultsmentioning

confidence: 99%

Hydrophilic nickel doped porous SnO₂ thin films prepared by spray pyrolysis

et al. 2020

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“…The direct band gap energy (Eg) for films of undoped, Mg-doped and F/Mg co-doped ZnO is estimated from the plots of (αhν) 2 versus the photon energy hν, as shown in Fig. 6, using the Tauc's equation [2,3,17,18]. The linear part of these graphs is extrapolated to the energy axis, and the energy value at (hν) 2  0 gives the value of Eg.…”

Section: -4mentioning

confidence: 99%

A Comparative Study on the Optoelectronic Performance of Undoped, Mg-doped and F/Mg Co-doped ZnO Nanocrystalline Thin Films

Darenfad¹,

Guermat²,

Mirouh³

2021

J. Nano- Electron. Phys.

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This work reports on the development and characterization of Zinc Oxide (ZnO) nanocrystalline thin films deposited on glass substrates by spray pyrolysis method. The effect of 1 % Mg-doping and 6 % F/ x % Mg co-doping (x  1, 2 and 3) on the structural, morphological, optical and electrical properties of the films obtained is studied. The structural characterization shows that all the deposited layers are polycrystalline with a hexagonal wurtzite-type structure due to the existence of a more intense peak relative to the (002) peak, located around an angle of 34.13° with no other phase detected. The measured contact angles are more than 90° for pure, doped and 6 % F/1 % Mg co-doped films prepared, which confirms the hydrophobic character, while other co-doped films (6 % F:2 % Mg and 6 % F:3 % Mg) show the hydrophilic character at values of the contact angle  90°. A higher transmittance value of 86.47 %, a wide band gap of 3.53 eV and lower disorder (330.03 meV) are observed for the 6 % F:1 % Mg co-doped film. Co-doping with 1 % Mg considerably improves the electrical conductivity (  0.030 (Ω.cm) -1 ). The results suggest that the co-doped ZnO film (6 % F, 1 % Mg) can be used as a window film in thin film solar cells.

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“…A reduction in the transmittance was also observed for Aluminum-doped amorphous ZnO (α-AZO) [22] and for the coating of glass with ZnO [23]. In addition, the dependence of the photon energy and the optical absorption coefficient (α) for the direct transition is expressed by the following relationship [24,25]:…”

Section: Resultsmentioning

confidence: 98%