2018
DOI: 10.1016/j.optlastec.2018.07.038
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Experimental study of optical frequency comb generation in gain-switched semiconductor lasers

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Cited by 49 publications
(55 citation statements)
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“…5 shows the experimental and the simulated optical spectra at I bias = 34 mA, f R = 5 GHz, and two values of V RF . As we already showed in [15], for the lower V RF , a high quality OFC is experimentally observed ( Fig. 5 (a)) with a high CNR = 39 dB and a broad ∆f 10 = 60 GHz, while when the applied voltage is increased ( Fig.…”
Section: Resultssupporting
confidence: 75%
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“…5 shows the experimental and the simulated optical spectra at I bias = 34 mA, f R = 5 GHz, and two values of V RF . As we already showed in [15], for the lower V RF , a high quality OFC is experimentally observed ( Fig. 5 (a)) with a high CNR = 39 dB and a broad ∆f 10 = 60 GHz, while when the applied voltage is increased ( Fig.…”
Section: Resultssupporting
confidence: 75%
“…The temporal and spectral response of the laser in GS operation was extensively characterized with and without OI for different values of f R , I bias , V RF , P inj and δν. The quality of the OFCs was characterized by means of the 10 dB spectral width (∆f 10 ) and the Carrier-to-Noise Ratio (CNR), as they are defined in [15]. The results of this characterization were compared with the simulations.…”
Section: Resultsmentioning
confidence: 99%
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