2012
DOI: 10.1109/jphotov.2011.2180894
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Experimental Study of Design Parameters in Silicon Micropillar Array Solar Cells Produced by Soft Lithography and Metal-Assisted Chemical Etching

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Cited by 52 publications
(47 citation statements)
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“…[9][10][11][12] Shin et al have reported on radially doped silicon micropillars of 10 µm in length and pointed out the importance of a proper surface passivation. [11] Yet, even with a passivation layer, reported efficiencies of silicon nano-and micropillar PV cells rarely exceed 5%. [11] Previously we showed the feasibility of radially doped silicon micropillars of 40 µm in length, with efficiencies well above 5%.…”
Section: Doi: 101002/aenm201601497mentioning
confidence: 99%
“…[9][10][11][12] Shin et al have reported on radially doped silicon micropillars of 10 µm in length and pointed out the importance of a proper surface passivation. [11] Yet, even with a passivation layer, reported efficiencies of silicon nano-and micropillar PV cells rarely exceed 5%. [11] Previously we showed the feasibility of radially doped silicon micropillars of 40 µm in length, with efficiencies well above 5%.…”
Section: Doi: 101002/aenm201601497mentioning
confidence: 99%
“…The lowering of the Reflectance in texturing patterns such as pyramids (Baker-Finch and McIntosh, 2011;Mavrokefalos et al, 2012), nanowires (Garnett and Yang, 2010;Madaria et al, 2011) or micro pillars arrays (Yoon et al, 2012;Shin et al, 2012;Logeeswaran et al, 2010;Kim et al, 2013;Sinton et al, 1996) is caused by certain factors. One factor is the refractive index averaging between the air and the cell material.…”
Section: Introductionmentioning
confidence: 99%
“…One factor is the refractive index averaging between the air and the cell material. A second factor is the light trapping by multiple reflections of the incoming light (Mavrokefalos et al, 2012;Garnett and Yang, 2010;Madaria et al, 2012;Shin et al, 2012;Logeeswaran et al, 2010).…”
Section: Introductionmentioning
confidence: 99%
“…WW/NW arrays with radial p/n junctions have a high aspect ratio which leads to a strongly increased surface area with concomitantly enhanced surface recombination. 60,61,[92][93][94][95] To overcome this problem, the surface can be passivated by an insulating layer. By passivating the Si surface, a reduction in the amount of surface trap states is observed 96,97 (i.e.…”
Section: P/n Junctions In Highly Structured Si Pv Devicesmentioning
confidence: 99%
“…Shin et al have reported on radially doped silicon micropillars of 10 µm in length and pointed out the importance of a proper surface passivation. 94 Lee et [99][100][101] Photocathodes with a buried p/n junction out-perform the p-Si/electrolyte junction, as is seen in Table 2.1 and Table 2.2. However, The obtained photovoltages are substantially lower as reported above (i.e.…”
Section: P/n Junctions In Highly Structured Si Pv Devicesmentioning
confidence: 99%