Experimental studies of the light-induced effects in undoped hydrogenated amorphous silicon as a function of deposition conditions

Zellama, K.; Labidi, Hatem; Germain, P.; Lortigues, D.; Chahed, L.; Thèye, M. L.; Besi, U.; Coscia, U.; Fameli, G.; Menna, P.; Roca, Pere; Cabarrocas, I.; Godet, C.

doi:10.1016/0040-6090(91)90077-b

Cited by 3 publications

(3 citation statements)

References 22 publications

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“…We obtain the same spectra than those summarized in Figs. 1 and 2, in agreement with previous results [20]. Concerning the PDS results, we present in Fig.…”

Section: Light Soaking Effectsupporting

confidence: 82%

“…state B ! state A is perfectly reproducible, as it has been reported for other types of a-Si : H films [16,20]. …”

Section: Light Soaking Effectsupporting

confidence: 62%

“…Indeed, in most cases the films produced by sputtering techniques exhibit higher den- sity of defects and disorder [17][18][19] compared to optimized PECVD ones [11,20]. However, recent studies performed on a-Si : H deposited by radiofrequency magnetron sputtering (RFMS) show that these films exhibit a more homogeneous hydrogen distribution in the silicon network and lower density of defects and disorder than the conventional and dc magnetron sputtered ones [4-6, 21, 22].…”

Section: Introductionmentioning

confidence: 99%

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Effect of the Nature of the Hydrogen Bonding on the Light-Induced Metastable Defects in Hydrogenated Amorphous Silicon Prepared by Radiofrequency Magnetron Sputtering

Daouahi¹,

Othman

Zellama³

et al. 2002

phys. stat. sol. (b)

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The effects of the nature of the hydrogen bonding and distribution on light-induced metastable defects are investigated in detail in a-Si : H films deposited by radiofrequency magnetron sputtering at high rates ($15 A/s) with different hydrogen dilution in the gas phase mixture (Ar + x% H 2 ) (x ¼ 5-20%). A combination of optical transmission and photothermal deflection spectroscopy measurements, correlated with infrared absorption ones, is used to characterise the samples in their as-deposited, annealed and light-soaked states. The results indicate that the increase in the light-induced density of defects is strongly dependent on the amount of the relative proportion of the polyhydride (Si-H 2 and (Si-H 2 ) n ) groups present in the as-deposited films, which favour the formation of structural inhomogeneities and increase the disorder. The results also show that optimised films can be elaborated and exhibit better stability than optimised samples elaborated at much lower rates ($1 A/s) by other techniques. The results are discussed as a whole in the context of the potential fluctuation model.

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“…We obtain the same spectra than those summarized in Figs. 1 and 2, in agreement with previous results [20]. Concerning the PDS results, we present in Fig.…”

Section: Light Soaking Effectsupporting

confidence: 82%

“…state B ! state A is perfectly reproducible, as it has been reported for other types of a-Si : H films [16,20]. …”

Section: Light Soaking Effectsupporting

confidence: 62%