Experimental studies of the electron–phonon interaction in InGaAs quantum wires

Abstract

Articles you may be interested inElectron-phonon interaction effect on the energy levels and diamagnetic susceptibility of quantum wires: Parallelogram and triangle cross section

Heat flow in InAs/InP heterostructure nanowires

“…The 2DEG wires in these papers range from 25 to 770 nm wide and 8 to 25 nm thick. [11][12][13]47,48 The n and /n carrier values from their data are shown in Fig. 6(a).…”

“…14,15 However, in experimental systems with onedimensional (1D) electrons and 3D phonons, experimentally observed power laws do not agree with these predictions. [11][12][13] In vertically grown NWs then, where both electrons and phonons can be confined to 1D, one would expect the same, if not greater, deviation from the usual power laws. In fact, many previous theoretical analyses of phonon confinement in nanoscale structures have predicted increased e-ph interaction energy exchange and scattering rates compared to bulk systems, [16][17][18][19][20][21][22] deviations from the T 3 or T 5 power laws, 20 and e-ph interaction regimes where powers laws are not obeyed.…”

“…Few experimental papers have characterized e-ph interaction in semiconductor nanowire systems, where electrons and phonons are confined to one-dimensional transport at low temperatures. [10][11][12][13] On the theory side, e-ph interaction strength was previously analyzed using three-dimensional (3D) phonon systems, which typically leads to the prediction of T 3 or T 5 power laws depending on the type of coupling considered. 14,15 However, in experimental systems with onedimensional (1D) electrons and 3D phonons, experimentally observed power laws do not agree with these predictions.…”

Hot‐electron energy‐loss rate via LA‐phonon scattering in InGaAs quantum wire

“…As expected, ELR increases with the increasing of electron temperature. Our results are presented in comparison with the ex-perimental data obtained in [13] In order to compare our results with the theoretical results obtained by Kabasi et al [15], where the bulk acoustic phonons are assumed, we also calculated ELR as a function of electron temperature for the GaAs quantum wire. The solid (dashed) line corresponds to the ELR along [100] ([111]) direction and the dotted one to the rate obtained in [15].…”

Confined and interface polar optical phonon‐limited electron mobility in quantum wires

“…The scattering of carriers by phonon modes in QWRs predetermines such phenomena as the cooling of optically excited carriers on the picosecond timescale as well as transport and optical properties at room temperature, and thus will be important in potential applications. Evidence for a strongly enhanced electron-phonon interaction was found in narrower wires and has been suggested to result from the strong backscattering of electrons due to singularities in the one-dimensional electronic density of states [2]. Phonon scattering not only determines the low-field mobility at room temperature but also determines the dynamics of non-equilibrium electron -phonon systems, the magnetoconductivity, the high-field saturation velocity of electrons, and a host of other phenomena in QWRs.…”