2021
DOI: 10.1016/j.ultramic.2020.113152
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Experimental quantification of atomically-resolved HAADF-STEM images using EDX

Abstract: Atomically-resolved mappings of the indium composition in InGaN/GaN multi-quantum well structures have been obtained by quantifying the contrast in HAADF-STEM. The quantification procedure presented here does not rely on computation-intensive simulations, but rather uses EDX measurements to calibrate the HAADF-STEM contrast. The histogram of indium compositions obtained from the mapping provides unique insights into the growth of InGaN: the transition from GaN to InGaN and vice versa occurs in discreet increme… Show more

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Cited by 3 publications
(4 citation statements)
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“…HAADF images can also be exploited to deduce the B concentration profile. Indeed, the high angular integrated intensity is directly related to the atomic number Z of the atomic columns scanned by the electron probe [19]. If we assume that in the binary compound Si:B, all the B atoms replace Si atoms in the crystal lattice, and that there are not other elements present, it is theoretically possible to calculate the B concentration from the deformation and the HAADF contrast, defined as the ratio between the layer intensity (I SiB ) relative to the volume of Si:B crystal lattice (V SiB ) and the substrate intensity (I SiB ) relative to the volume of the Si crystal lattice (V Si ):…”
Section: Extraction Of the B Distribution Profilementioning
confidence: 99%
“…HAADF images can also be exploited to deduce the B concentration profile. Indeed, the high angular integrated intensity is directly related to the atomic number Z of the atomic columns scanned by the electron probe [19]. If we assume that in the binary compound Si:B, all the B atoms replace Si atoms in the crystal lattice, and that there are not other elements present, it is theoretically possible to calculate the B concentration from the deformation and the HAADF contrast, defined as the ratio between the layer intensity (I SiB ) relative to the volume of Si:B crystal lattice (V SiB ) and the substrate intensity (I SiB ) relative to the volume of the Si crystal lattice (V Si ):…”
Section: Extraction Of the B Distribution Profilementioning
confidence: 99%
“…The central electrode platform is secured by screws (302). Water spray at the top (305) and bottom (303) facility is provided in which spray water is fed through a concentric pipe system (307,308) while syngas is fed (304) or collected (306) from the annular regions. Tar captured on the porous catalytic earth electrode and in the tar collection space (316) both act as a barrier for the gas and hence tar removal from the bottom exit (317) has to be carried out gradually.…”
Section: Model Syngas and Tarmentioning
confidence: 99%
“…In situ spectroscopic techniques were developed for the detection of reaction intermediates [302,303] and reaction-environment-dependent dynamic evolution of active sites in the catalyst (i.e., the transformation between the surface terrace and step sites) [304]. Atomically resolved mapping of catalyst surfaces was achieved using High Angle Annular Dark Field Scanning Transmission Electron Microscopy (HAADF-STEM) [280,305,306], Atomic Force Microscopy (AFM), Scanning Tunnelling Microscopy (STM) or combined AFM and STM have been successfully used for the in situ observation of oxygen vacancy sites and their generation [307][308][309][310][311][312]. The noncontact AFM provides an exceptional spatial resolution due to the use of a terminal oxygen atom functionalized tip [309,310].…”
Section: Analytical Techniques and In Situ Observation Of Catalyst/co...mentioning
confidence: 99%
“…While, EELS acquires the energy loss of the incident electrons due to interactions with the sample, providing the electronic information about chemical bonding, valence and conduction band. [66,95,96] Considering the fact that inelastic scattering of the incident electron beam is strongly forward scattered, the signal collection efficiency of EELS is much higher than that of EDX. Furthermore, the energy resolution of EDX is worse in comparison with EELS.…”
Section: Introductionmentioning
confidence: 99%