Experimental observations of temperature-dependent flat band voltage transients on high-k dielectrics

Dueñas, S.; Castán, Helena; García, Héctor; Bailón, L.; Kukli, Kaupo; Hatanpää, Timo; Ritala, Mikko; Leskelä, Markku

doi:10.1016/j.microrel.2007.01.080

Cited by 20 publications

(30 citation statements)

References 9 publications

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“…In fact, these transients give information about phonon-assisted tunneling mechanisms between localized states in the bandgap of the insulator. 19 As expected, transient amplitude is bigger in samples, which show hysteresis phenomena. In …”

Section: B Electrical Measurementssupporting

confidence: 65%

Influence of interlayer trapping and detrapping mechanisms on the electrical characterization of hafnium oxide/silicon nitride stacks on silicon

García

Dueñas

Castán

et al. 2008

Journal of Applied Physics

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Al/ HfO 2 / SiN x :H/ n-Si metal-insulator-semiconductor capacitors have been studied by electrical characterization. Films of silicon nitride were directly grown on n-type silicon substrates by electron cyclotron resonance assisted chemical vapor deposition. Silicon nitride thickness was varied from 3 to 6.6 nm. Afterwards, 12 nm thick hafnium oxide films were deposited by the highpressure sputtering approach. Interface quality was determined by using current-voltage, capacitance-voltage, deep-level transient spectroscopy ͑DLTS͒, conductance transients, and flatband voltage transient techniques. Leakage currents followed the Poole-Frenkel emission model in all cases. According to the simultaneous measurement of the high and low frequency capacitance voltage curves, the interface trap density obtained for all the samples is in the 10 11 cm −2 eV −1 range. However, a significant increase in this density of about two orders of magnitude was obtained by DLTS for the thinnest silicon nitride interfacial layers. In this work we probe that this increase is an artifact that must be attributed to traps existing at the HfO 2 / SiN x : H intralayer interface. These traps are more easily charged or discharged as this interface comes near to the substrate, that is, as thinner the SiN x : H interface layer is. The trapping/detrapping mechanism increases the capacitance transient and, in consequence, the DLTS measurements have contributions not only from the insulator/substrate interface but also from the HfO 2 / SiN x : H intralayer interface.

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Section: B Electrical Measurementssupporting

confidence: 65%

Influence of interlayer trapping and detrapping mechanisms on the electrical characterization of hafnium oxide/silicon nitride stacks on silicon

García

Dueñas

Castán

et al. 2008

Journal of Applied Physics

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“…Detailed studies on the defect densities in Gd 2 O 3 films remain beyond the scope of this paper and are thus conducted separately. [36] On the other hand, the C-V curves were quite stable, neither the hysteresis nor the capacitance changed upon multiple bias voltage back-forth sweeps. Stability of the C-V curves, absence of "humps" and other distortions referring to deep interface trapping, and reasonably high permittivity are promising features of MOS structures fabricated in this study.…”

Section: Dielectric Behaviormentioning

confidence: 96%

Atomic Layer Deposition of Gadolinium Oxide Films

Kukli

Hatanpää

Ritala

et al. 2007

Chemical Vapor Deposition

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Thin cubic Gd 2 O 3 films are grown by atomic layer deposition (ALD), in the temperature range 300-400°C, using a novel tris(2,3-dimethyl-2-butoxy)gadolinium(III) precursor, Gd[OC(CH 3 ) 2 CH(CH 3 ) 2 ] 3 , and water. The films are crystalline in their as-deposited state. The films contain some residual hydrogen and carbon, and are probably oxygen-deficient in the as-deposited state, causing flat-band shifts in Gd 2 O 3 -based metal-oxide-semiconductor (MOS) capacitor structures. On the other hand, the permittivity of Gd 2 O 3 dielectric layers reaches 16, approximately, when calculated from the relationship between equivalent and physical oxide thicknesses, and breakdown fields as high as 8 MV cm -1 .

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“…Some samples had leakage currents clearly too high to allow us to record conductance transients, and, because of that, disordered-induced gap state (DIGS) distribution could not be obtained in these cases at all [11,12]. On the other hand, none of the samples studied here exhibited flat-band voltage transients [13], which can be explained in terms of the highly disordered, at least partially amorphous nature of the fabricated TiO 2 (see more details in Section 3) and accompanying high density of gap states with fast transfer of charge carriers. Therefore, the main attention has been focused on I-V, C-V, and capacitance transients, i.e., deep level transient spectroscopy (DLTS) measurements.…”

Section: Methodsmentioning

confidence: 83%

Selection of post-growth treatment parameters for atomic layer deposition of structurally disordered TiO2 thin films

Dueñas

Castán

García

et al. 2008

Journal of Non-Crystalline Solids

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Experimental observations of temperature-dependent flat band voltage transients on high-k dielectrics

Cited by 20 publications

References 9 publications

Influence of interlayer trapping and detrapping mechanisms on the electrical characterization of hafnium oxide/silicon nitride stacks on silicon

Influence of interlayer trapping and detrapping mechanisms on the electrical characterization of hafnium oxide/silicon nitride stacks on silicon

Atomic Layer Deposition of Gadolinium Oxide Films

Selection of post-growth treatment parameters for atomic layer deposition of structurally disordered TiO2 thin films

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