Experimental Observation of Negative Susceptance in HfO<sub>2</sub>-Based RRAM Devices

Dueñas, S.; Castán, Helena; García, Héctor; Ossorio, Óscar G.; Domínguez, L. A.; Miranda, E.

doi:10.1109/led.2017.2723054

Cited by 14 publications

(22 citation statements)

References 25 publications

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“…RESET in the case of some other materials, such as Ta2O5-TiO2-Ta2O5 trilayer structures also grown by ALD [58]. In the latter case, the SET process tended to be gradual, passing certain steps between the high and low resistance states, which is not observed in the present case.…”

Section: Resultscontrasting

confidence: 46%

Silicon oxide-niobium oxide mixture films and nanolaminates grown by atomic layer deposition from niobium pentaethoxide and hexakis(ethylamino) disilane

et al. 2020

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Amorphous SiO2-Nb2O5 nanolaminates and mixture films were grown by atomic layer deposition. The films were grown at 300 o C from Nb(OC2H5)5, Si2(NHC2H5)6, and O3 to thicknesses ranging from 13 to 130 nm. The niobium to silicon atomic ratio was varied in the range of 0.11-7.20. After optimizing the composition, resistive switching properties could be observed in the form of characteristic current-voltage behavior. Switching parameters in the conventional regime were well defined only in a SiO2:Nb2O5 mixture at certain, optimized, composition with Nb:Si atomic ratio of 0.13, whereas low-reading voltage measurements allowed recording memory effects in a wider composition range.

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Section: Resultscontrasting

confidence: 46%

Silicon oxide-niobium oxide mixture films and nanolaminates grown by atomic layer deposition from niobium pentaethoxide and hexakis(ethylamino) disilane

et al. 2020

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“…4.a and 4.b. In the continuous limit, (7) naturally generates the sigmoidal hysteron structure -V (positive and negative ridge functions) introduced in [11,29,30]. In the present approach, this mathematical structure is no longer required.…”

Section: I) Memory State Evolution Under Constant Voltage Input Signalmentioning

confidence: 99%

Memristive State Equation for Bipolar Resistive Switching Devices Based on a Dynamic Balance Model and its Equivalent Circuit Representation

Miranda¹,

Suñé²

2019

Preprint

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“…It has been established earlier, that by using pulsed voltages instead of ramped bias, memory mapping can be performed [6]. Conductance memory maps clearly show the two different states, as well as the influence of the dielectric composition (Fig.…”

Section: Resultsmentioning

confidence: 76%

Study of the Influence of the Dielectric Composition of Al/Ti/ZrO₂:Al₂O₃/TiN/Si/Al Structures on the Resistive Switching Behavior for Memory Applications

et al. 2018

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The memory behavior of Al/Ti/ZrO2:Al2O3/TiN/Si/Al devices is investigated in this work. They are adequate to be used as resistive switching memories, with two clearly different states. Besides, intermediate states are also accessible in a controllable manner. The electrical characterization in terms of admittance parameters provides relevant complementary information. The cation ratio influences the memory maps and can be changed to obtain specifically sized shape of the maps.

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Experimental Observation of Negative Susceptance in HfO₂-Based RRAM Devices

Cited by 14 publications

References 25 publications

Silicon oxide-niobium oxide mixture films and nanolaminates grown by atomic layer deposition from niobium pentaethoxide and hexakis(ethylamino) disilane

Silicon oxide-niobium oxide mixture films and nanolaminates grown by atomic layer deposition from niobium pentaethoxide and hexakis(ethylamino) disilane

Memristive State Equation for Bipolar Resistive Switching Devices Based on a Dynamic Balance Model and its Equivalent Circuit Representation

Study of the Influence of the Dielectric Composition of Al/Ti/ZrO₂:Al₂O₃/TiN/Si/Al Structures on the Resistive Switching Behavior for Memory Applications

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Experimental Observation of Negative Susceptance in HfO2-Based RRAM Devices

Cited by 14 publications

References 25 publications

Silicon oxide-niobium oxide mixture films and nanolaminates grown by atomic layer deposition from niobium pentaethoxide and hexakis(ethylamino) disilane

Silicon oxide-niobium oxide mixture films and nanolaminates grown by atomic layer deposition from niobium pentaethoxide and hexakis(ethylamino) disilane

Memristive State Equation for Bipolar Resistive Switching Devices Based on a Dynamic Balance Model and its Equivalent Circuit Representation

Study of the Influence of the Dielectric Composition of Al/Ti/ZrO2:Al2O3/TiN/Si/Al Structures on the Resistive Switching Behavior for Memory Applications

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Experimental Observation of Negative Susceptance in HfO₂-Based RRAM Devices

Study of the Influence of the Dielectric Composition of Al/Ti/ZrO₂:Al₂O₃/TiN/Si/Al Structures on the Resistive Switching Behavior for Memory Applications