Experimental observation of FIB induced lateral damage on silicon samples

Spoldi, G.; Beuer, S.; Rommel, Mathias; Yanev, V.; Bauer, Anton J.; Ryssel, H.

doi:10.1016/j.mee.2009.01.003

Cited by 24 publications

(21 citation statements)

References 9 publications

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“…Electric fields are known to influence permalloy growth [28], and gallium ions have been shown to implant around FIB-milled features in silicon [29,30]. Gallium ions were found surrounding FIB-milled holes using energy dispersive x-ray spectroscopy [31].…”

Section: Resultsmentioning

confidence: 99%

Effect of using stencil masks made by focused ion beam milling on permalloy (Ni₈₁Fe₁₉) nanostructures

et al. 2013

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Focused ion beam (FIB) milling is a common fabrication technique to make nanostencil masks which has the unintended consequence of gallium ion implantation surrounding milled features in silicon nitride membranes. We observe major changes in film structure, chemical composition, and magnetic behaviour of permalloy nanostructures deposited by electron beam evaporation using silicon nitride stencil masks made by a FIB as compared to stencil masks made by regular lithography techniques. We characterize the stenciled structures and both types of masks using transmission electron microscopy, electron energy loss spectroscopy, energy dispersive x-ray spectroscopy, magnetic force microscopy and kelvin probe force microscopy. All these techniques demonstrate distinct differences at a length scale of a 1-100 nm for the structures made using stencil mask fabricated using a FIB. The origin of these differences seems to be related to the presence of implanted ions, a detailed understanding of the mechanism however remains to be developed.

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Section: Resultsmentioning

confidence: 99%

Effect of using stencil masks made by focused ion beam milling on permalloy (Ni₈₁Fe₁₉) nanostructures

et al. 2013

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“…As dwell time increases, the ion beam spends more time at each pixel site causing more ion implantation and damage occurs on the substrate beneath. From Monte Carlo simulations (Figure 1) it is observed that the volume of implanted regions is about 1000nm 3 . As dwell time increases, more ions are accumulated in this volume (de-channelling) and more damage occurs to the substrate produce more amorphous Si.…”

Section: Methodsmentioning

confidence: 99%

“…In particular, FIB generated surface topographies for the doses relevant to the early stages of FIB milling have been studied [2]. Damage effects in Si in particular was investigated by Spoldi et al [3].…”

Section: Introductionmentioning

confidence: 99%

The effects of dwell time on focused ion beam machining of silicon

Sabouri

Anthony

Bowen

et al. 2014

Microelectronic Engineering

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In this study, the effects of dwell time on Ga + focused ion beam machining at 30 keV for different milling currents were investigated. The surface topographies were analysed using atomic force microscopy (AFM) and the substrate structures were investigated by means of Raman spectroscopy. It has been observed that by increasing dwell time the total sputtering yield was increased even though the total dose was remained the same. Also the silicon damage by ion bombardment is reduced as the dwell time is increased. This is mainly due to catalyst behaviour of Ga inside Si which over a period of hours causes recrystallization of Si at room temperature by lowering the activation energy for crystallization. 2 IntroductionFocused ion beam (FIB) systems are widely used as a versatile tool for nanofabrication prototyping, device modification and ion beam lithography. Two main categories of FIB micromachining are sputtering and deposition. FIB sputtering is a maskless microfabrication technique where incident ions transfer momentum to the substrate and release atoms through cascades of collisions.

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“…14 For silicon substrates, consistent results have been achieved by scanning spreading resistance measurements (SSRM) in our earlier work. 5,15 Recently, in the field of power electronics, the performance of Si devices has almost reached theoretical limits. Further improvements require investigation of new materials.…”

Section: Introductionmentioning

confidence: 99%

Detailed characterisation of focused ion beam induced lateral damage on silicon carbide samples by electrical scanning probe microscopy and transmission electron microscopy

Stumpf

Quba

Singer

et al. 2018

Journal of Applied Physics

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The lateral damage induced by focused ion beam on silicon carbide was characterized using electrical scanning probe microscopy (SPM), namely, scanning spreading resistance microscopy and conductive atomic force microscopy (c-AFM). It is shown that the damage exceeds the purposely irradiated circles with a radius of 0.5 lm by several micrometres, up to 8 lm for the maximum applied ion dose of 10 18 cm À2. Obtained SPM results are critically compared with earlier findings on silicon. For doses above the amorphization threshold, in both cases, three different areas can be distinguished. The purposely irradiated area exhibits resistances smaller than the non-affected substrate. A second region with strongly increasing resistance and a maximum saturation value surrounds it. The third region shows the transition from maximum resistance to the base resistance of the unaffected substrate. It correlates to the transition from amorphized to defectrich to pristine crystalline substrate. Additionally, conventional transmission electron microscopy (TEM) and annular dark-field STEM were used to complement and explain the SPM results and get a further understanding of the defect spreading underneath the surface. Those measurements also show three different regions that correlate well with the regions observed from electrical SPM. TEM results further allow to explain observed differences in the electrical results for silicon and silicon carbide which are most prominent for ion doses above 3 Â 10 16 cm À2. Furthermore, the conventional approach to perform current-voltage measurements by c-AFM was critically reviewed and several improvements for measurement and analysis process were suggested that result in more reliable and impactful c-AFM data.

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Experimental observation of FIB induced lateral damage on silicon samples

Cited by 24 publications

References 9 publications

Effect of using stencil masks made by focused ion beam milling on permalloy (Ni₈₁Fe₁₉) nanostructures

Effect of using stencil masks made by focused ion beam milling on permalloy (Ni₈₁Fe₁₉) nanostructures

The effects of dwell time on focused ion beam machining of silicon

Detailed characterisation of focused ion beam induced lateral damage on silicon carbide samples by electrical scanning probe microscopy and transmission electron microscopy

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Experimental observation of FIB induced lateral damage on silicon samples

Cited by 24 publications

References 9 publications

Effect of using stencil masks made by focused ion beam milling on permalloy (Ni81Fe19) nanostructures

Effect of using stencil masks made by focused ion beam milling on permalloy (Ni81Fe19) nanostructures

The effects of dwell time on focused ion beam machining of silicon

Detailed characterisation of focused ion beam induced lateral damage on silicon carbide samples by electrical scanning probe microscopy and transmission electron microscopy

Contact Info

Product

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Effect of using stencil masks made by focused ion beam milling on permalloy (Ni₈₁Fe₁₉) nanostructures

Effect of using stencil masks made by focused ion beam milling on permalloy (Ni₈₁Fe₁₉) nanostructures