Abstract:Nanosphere lithography provides an e-beam free method for patterning gold nanoplasmonic antennas. By combining this technique with deep-UV photolithography, we fabricate Si 3 N 4 waveguides interfaced to plasmonic antennas capable of exciting and collecting surface-enhanced Raman spectra. Surface-enhanced Raman spectroscopy (SERS) has become an established technique for a sensitive and selective detection in a myriad of applications [1]. Following the development of waveguide-based Raman spectroscopy [2][3][4], recent efforts successfully combined gold nano-antennas with dielectric photonic waveguides at visible wavelengths [5,6]. This led to first demonstrations of waveguide-based excitation and collection of surface-enhanced Raman scattering [6]. However, current approaches rely on very challenging fabrication schemes using (multiple) ebeam exposures with both critical alignment and resolution. Not only are these processes resource-intensive, they are also hard to combine with already patterned photonic circuits. As a consequence, the full potential of a mature integrated technology remains out of reach for SERS-based products. Important examples of these are the silicon or silicon nitride photonics platforms enabled by wafer-scale deep-UV patterning in a CMOS-fab [7]. In contrast, it is exactly this access to optimized and mass reproducible photonic components such as filters, modulators and spectrometers that drives continuing success of other types of integrated optical biosensors.Here, we introduce a nanosphere-lithography based method for patterning gold nanotriangles on deep-UV patterned Si 3 N 4 photonic waveguides. We demonstrate excitation and collection of surface-enhanced Raman spectra using this waveguide. To the best of our knowledge, this is the first demonstration of a waveguide-based, e-beam free SERS-platform. It opens a route towards a complete on-chip Raman spectrometer combining both the sensing area, the spectrometer and even the pump source.We start from a 4 cm 2 deep-UV patterned dye containing 220 nm thick and 1.6 μm wide Si 3 N 4 strip waveguides on a 2.4 μm SiO 2 layer on Si. On top of this chip a 5 μm wide opening is patterned in photoresist (AZ MiR 701) using UV contact lithography. After thinning down the resist to 400 nm using O 2 plasma (Vision 320 RIE, 50 sccm O 2, 75 W, 100 mTorr, 235 s), polystyrene beads with a 448 nm diameter are spin coated at an optimized speed, dilution and acceleration in order to acquire a hexagonally packed monolayer of beads in the opening on top of the waveguide (fig 1(a)). Next, a short O 2 plasma (15 s) is used to, on the one hand, ensure a good metal adhesion and, on the other hand, reduce the size of the beads such that final nanotriangles will have an optimal localized surface plasmon resonance for Raman excitation at 785 nm. These beads subsequently act as a mask for evaporating a 2 nm Ti adhesion layer and a 70 nm Au layer. After gold deposition, the beads and photoresist are lifted off, revealing the periodic array of gold nanotriang...