Experimental investigation to determine the optical properties of (Fe2O3)1-x(NiO)x thin films prepared by PLD technique for NLO applications

Najim, Aus A.; Hassan, Faez M.; Rasheed, Hiba S.; Ismail, Hashimah; Darwoysh, Hassan H.

doi:10.1016/j.optmat.2021.111602

Cited by 6 publications

(2 citation statements)

References 35 publications

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“…In our case, we used the application of NiC2O4•2H2O solution on the por-InP substrate, resulting in the formation of oxalate containing layer with NiO inclusions (crystallites). Our results are in good agreement with the data previously obtained [27,28]. Note that a similar mechanism of synthesis of NiO nanocrystallites with NiC2O4•2H2O is demonstrated in the paper [28], with the fundamental difference that the oxalate layer was transferred to the oxide layer within 24 hours.…”

Section: Energy Dispersive X-ray (Edx) Mapping Analysis Of the Samplesupporting

confidence: 92%

The Synthesis of porous indium phosphide with nickel oxide crystallites on the surface

Suchikova

Bohdanov

Ковачов

et al. 2022

J. Electrochem. Sci. Eng.

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In this paper, the technology of synthesis of crystallites and nanocrystallites of nickel oxide on the surface of indium phosphide is described. This technology consists of two stages. In the first stage, porous indium phosphide is formed on the surface of a single crystal of indium phosphide. The formation of such a porous layer provides better adhesion to the surface of the sample. The second stage involves the preparation of the solution that contains nickel ions, application of this solution to the surface of porous indium phosphide, followed by annealing. As a result, NiO/NiC2O4∙2H2O/por-InP/mono-InP structure was formed. Surface morphological parameters were obtained using scanning electron microscopy and EDX-analysis of chemical composition. Chemical analysis confirmed the partial formation of nickel oxide from nickel oxalate layer by thermal annealing. Using scanning electron microscopy, it has been established that the crystallites have a large scatter in diameter, but they may be divided into three characteristic groups: macro-; meso- and nanocrystallites. Such structures may find prospects for application in electrochemical capacitors and lithium-ion batteries. Further research is needed for methodology improvement to obtain structures with predetermined controlled properties.

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Section: Energy Dispersive X-ray (Edx) Mapping Analysis Of the Samplesupporting

confidence: 92%

The Synthesis of porous indium phosphide with nickel oxide crystallites on the surface

Suchikova

Bohdanov

Ковачов

et al. 2022

J. Electrochem. Sci. Eng.

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show abstract

“…However, various flm deposits obtain specifc properties. For gas sensors, Rasheed et al [32] developed (NiO : Zn) thin flms by easy chemical spray pyrolysis, and for optical properties, Najim [33] and Hassan [34] created nanocrystalline Ba-doped Mn 3 O 4 and Co-doped ZnO thin flms, showing that the band gap decreases with increasing Co doping concentrations for ZnO thin flms and is improved by increasing Ba doping for Mn 3 O 4 .…”

Section: Introductionmentioning

confidence: 99%

The Role of Annealing Treatment on Crystallographic, Optical, and Electrical Features of Bi2O3 Thin Films Prepared Using Reactive Plasma Sputtering Technology

Beden,

Dumboos,

Ismael

et al. 2023

Journal of Nanotechnology

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Bismuth oxide (Bi2O3) has attracted considerable research interest in test thin films made utilizing the reactive plasma sputtering (RPS) technology-assisted annealing treatment, allowing the development of diverse BixOx thin films. SEM, phase X-ray diffraction patterns, UV-Vis spectrometers, and D.C. two-probes are used to identify the crystallographic structure and assess the films’ optical-electrical properties. The XRD examination showed that forming Bi2O3 films with an amorphous to multiphase crystalline structure for sputtering time of 40 min was due to soda glass substrate temperature at a range of 30–35°C. Thin films of Bi2O3 crystal structures improved with annealing heat treatment at 200, 300, 400, and 500°C. Yet the formation of crystalline phase (β-Bi2O3 with δ-Bi2O3) Bi2O3 nanostructures occurred at higher temperatures. SEM images showed transparent particles highly affected by annealing temperatures. The nanostructures were about 102–510 nm long, and the diameter was 50–100 nm. The Bi2O3 film optical band gaps and nanostructures ranged from 2.75 to 3.05 eV. The annealing temperature differences affected the crystallite sizes, optical band gaps, and surface roughness. The findings showed that these differences caused the phase transition in Bi2O3 structures. The electrical calculation revealed that the electrical conductivity improved with annealing temperatures of 150–250°C while declining with temperature (300–500)°C with typical semiconductor films.

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Synthesis, characterization, and gas-sensing performance of macroporous Zn-doped NiO thin films for ammonia gas detection

Rasheed

Abdulgafour²,

Hassan

et al. 2022

J Mater Sci: Mater Electron

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Experimental investigation to determine the optical properties of (Fe2O3)1-x(NiO)x thin films prepared by PLD technique for NLO applications

Cited by 6 publications

References 35 publications

The Synthesis of porous indium phosphide with nickel oxide crystallites on the surface

The Synthesis of porous indium phosphide with nickel oxide crystallites on the surface

The Role of Annealing Treatment on Crystallographic, Optical, and Electrical Features of Bi2O3 Thin Films Prepared Using Reactive Plasma Sputtering Technology

Synthesis, characterization, and gas-sensing performance of macroporous Zn-doped NiO thin films for ammonia gas detection

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