Experimental investigation on some electrical parameters of In10−Sn Se90 (x = 2, 4, 6, and 8) chalcogenide glasses before and after γ-irradiation

Shaheen, Adel; Imran, Mousa M.A.; Lafi, Omar A.; Abdullah, Ma’rouf K.

doi:10.1016/j.cap.2010.08.034

Cited by 10 publications

(5 citation statements)

References 42 publications

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“…Table 3 shows the calculated values of hopping distance (R Hop ) and hopping energy (W) for all the samples at 303 K temperature. According to the variable range hopping model as the hopping distance and hopping energy decreases [23], the value of conductivity increases and this is in good agreement with our results as mentioned above. Further it is observed that the values of W > K B T which is according to the Mott's variable range hopping model.…”

Section: Compositionsupporting

confidence: 92%

“…In the last decade conduction mechanisms in chalcogenide materials have been studied extensively which is basically related to the charge transport, conduction and trapping/de-trapping of charge carriers in these materials [2,6,[20][21][22]. The study of temperature and field dependent electrical conductivity of chalcogenide alloys delivers essential information about the nature of defect states which are responsible for different conduction mechanisms in chalcogenide semiconductors [23]. The conduction mechanisms are foundational to the design, development, and optimization of electronic devices.…”

Section: Introductionmentioning

confidence: 99%

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Study of conduction mechanisms of InSeSb nano-chalcogenide alloys

Thakur,

Rangra

2024

J. Phys.: Condens. Matter

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The electrical conduction mechanisms for bulk samples of In0.1Se0.9-xSbx (x= 0, 0.04, 0.08 and 0.12) nano-chalcogenide system, synthesized by the melt-quenching technique are investigated through current-voltage (I-V) characteristics. For the detailed study of conduction mechanism pellets of bulk samples are prepared. A thorough examination of electrical conductivity is done in the temperature range of 295-318 K and 0-50 V voltage range. From I-V measurements it is observed that samples are showing ohmic nature at lower field and non-ohmic nature at relatively higher field values. The temperature dependence of DC conductivity is analyzed using the Arrhenius relationship which is found to increase with Sb content. The value of activation energy and pre-exponential factor are calculated, which revealed that the conduction is due to the hopping of charge carriers among the localized states. Different parameters of Mott’s variable range hopping such as degree of disorder T0, density of localized states N(EF), hopping distance (Rhop), and hopping energy (W) are calculated. For the high field conduction process Poole-Frenkel, and Schottky processes are studied.

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Section: Compositionsupporting

confidence: 92%

Section: Introductionmentioning

confidence: 99%

Study of conduction mechanisms of InSeSb nano-chalcogenide alloys

Thakur,

Rangra

2024

J. Phys.: Condens. Matter

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“…The earlier study [25] on chalcogenides showed that such glasses generally exhibit a linear relation between ln I vs. V 1/2 and reported that the excess of Sb in Se-Te-Sb system induces changes in conductivity and it has been concluded that 4 at.% of Sb has the maximum electrical conductivity. It is interesting to note that DC electrical conductivity in our study is increasing with Sn content in the composition range x = 8 to 20 at.% while Shaheen et al [26] reported that the DC conductivity increases with Sn concentration up to 6 at.% only, after which it decreases due to the formation of SnSe 4/2 tetrahedral induced by local environmental readjustment which involves the change in the coordination number of Sn. Singh et al [27] studied the I-V characteristics of Se-Zn-In ternary chalcogenide system at room temperature and reported that this system also exhibits both ohmic and non-ohmic behaviour in the studied voltage range.…”

Section: Conductivitymentioning

confidence: 44%

I-V measurements of Ge-Se-Sn chalcogenide glassy alloys

Kumari

Kaswan

Patidar

et al. 2015

PAC

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Current-voltage characteristics and DC electrical conductivity were studied for Ge30-xSe70Snx (x = 8, 11, 14, 17 and 20) glassy thin pellets of diameter 12mm and thickness 1mm prepared under a constant load of 5 tons using a well-known melt quenching technique in bulk as a function of composition. The I-V characteristics were recorded at room temperature as well as elevated temperatures up to 300?C. The experimental data suggests that glass containing 20 at.% of Sn has the minimum resistance allowing maximum current through the sample as compared to other counterparts of the series. Therefore, DC conductivity is found to increase with increasing Sn concentration. Composition dependence of DC conductivity is discussed in terms of the bonding between Se and Sn. Plots between ln I and V1/2 provide linear relationship for both low and high voltage range. These results have been explained through the Pool-Frenkel mechanism. The I-V characteristics show ohmic behaviour in the low voltage range and this behaviour turns to non-ohmic from ohmic in the higher voltage range due to voltage induced temperature effects.

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“…Moreover, the addition of tin to Se-In glass yields the required ternary, the structure of which contains a very small number of SnSe 4/2 tetrahedral units dissolved in a matrix composed of Se chains and some In 2 Se 3 units. This increases relatively the number of Se 8 rings while the number of long Se n chains decreases (Shaheen et al, 2011). It is known that (Khan et al, 2002) the glass transition temperature T g increases with increasing chain length and decreases with increasing ring concentration.…”

Section: Methodsmentioning

confidence: 94%

“…As a result of these processes, breaking of chemical bonds and creation of new ones take place which causes a change in some electrical and optical properties (like conductivity and optical band gap) and leads to long-lived forms of physical breakdown (Arshak and Korostynska, 2006;Al-Bati et al, 2010;Al-Ewaisi et al,2010;Shaheen et al, 2011).…”

Section: Introductionmentioning

confidence: 98%