Experimental investigation of the ratchet effect in a two-dimensional electron system with broken spatial inversion symmetry

Sassine, S.; Krupko, Y.; Portal, J. C.; Kvon, Z. D.; Murali, Raghunath; Martin, K. P.; Hill, G.; Wieck, A. D.

doi:10.1103/physrevb.78.045431

Cited by 51 publications

(70 citation statements)

References 27 publications

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“…Quite generally, this can be achieved by breaking spatial mirror symmetry (see, e.g., Refs. [52][53][54]). Particle-hole symmetry need be broken as well, which is the basic requirement for any thermoelectric device.…”

Section: Introductionmentioning

confidence: 99%

Nanowire-based thermoelectric ratchet in the hopping regime

et al. 2016

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We study a thermoelectric ratchet consisting of an array of disordered nanowires arranged in parallel on top of an insulating substrate and contacted asymmetrically to two electrodes. Transport is investigated in the Mott hopping regime, when localized electrons can propagate through the nanowires via thermally assisted hops. When the electronic temperature in the nanowires is different from the phononic one in the substrate, we show that a finite electrical current is generated even in the absence of driving forces between the electrodes. We discuss the device performance both as an energy harvester, when an excess heat from the substrate is converted into useful power, and as a refrigerator, when an external power is supplied to cool down the substrate.

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Section: Introductionmentioning

confidence: 99%

Nanowire-based thermoelectric ratchet in the hopping regime

et al. 2016

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“…While research aimed to development of THz FET detectors is focused on single gate structures, recently several groups have shown that higher sensitivities are expected for structures with periodic symmetric and asymmetric metal stripes or gates. 9,[15][16][17][18][19][20][21][22] In particular, dual-grating-gate (DGG) FET are considered as a good candidate for sensitive THz detection. The first data obtained on dual-gated-structures demonstrated a substantial enhancement of the photoelectric response and an ability to control detector parameters by variation of individual gate bias voltage.…”

Section: Introductionmentioning

confidence: 99%

Helicity sensitive terahertz radiation detection by dual-grating-gate high electron mobility transistors

Faltermeier

Olbrich

Probst

et al. 2015

Journal of Applied Physics

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Ultrahigh sensitive sub-terahertz detection by InP-based asymmetric dual-grating-gate high-electron-mobility transistors and their broadband characteristics Appl. Phys. Lett. 104, 251114 (2014) We report on the observation of a radiation helicity sensitive photocurrent excited by terahertz (THz) radiation in dual-grating-gate (DGG) InAlAs/InGaAs/InAlAs/InP high electron mobility transistors (HEMT). For a circular polarization, the current measured between source and drain contacts changes its sign with the inversion of the radiation helicity. For elliptically polarized radiation, the total current is described by superposition of the Stokes parameters with different weights. Moreover, by variation of gate voltages applied to individual gratings, the photocurrent can be defined either by the Stokes parameter defining the radiation helicity or those for linear polarization. We show that artificial non-centrosymmetric microperiodic structures with a twodimensional electron system excited by THz radiation exhibit a dc photocurrent caused by the combined action of a spatially periodic in-plane potential and spatially modulated light. The results provide a proof of principle for the application of DGG HEMT for all-electric detection of the radiation's polarization state. V C 2015 AIP Publishing LLC. [http://dx

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“…Recently, the Ratchet device has been proposed to be used in the fabrication of current generators and detectors at high microwave frequencies [2][3][4][5][6]; also with the possibility of using the terahertz radiation [9,10]. The concept of operation [2][3][4][5][6][7] consists of radiating a two-dimensional electron gas asymmetric system with a microwave linear polarized radiation and producing a DC induced photovoltage. At low temperature, this effect is recently observed in AlGaAs/GaAs [2,3] and Si/SiGe [4][5][6] heterostructure samples which are characterized by the high mobility of electrons.…”

Section: Introductionmentioning

confidence: 99%

A Methodology to Study the Electromagnetic Behavior of a Cryogenic Metallic System Used to Control the Ratchet Effect

Medhat¹,

Takacs²,

Aubert³

2012

PIER M

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Abstract-We introduce an electromagnetic investigation of the complex experimental setup used in studying the Ratchet Effect at low temperature. This investigation, based on intensive electromagnetic simulations, shows that a compromise has to be taken into consideration between the physical aspects, the technological and the practical restrictions as well as the electromagnetic conditions of the observed phenomenon. By improving the electromagnetic response of the whole system, the Ratchet induced photovoltage can be increased, and hence the Ratchet device can be used for practical applications in wireless communications.

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Experimental investigation of the ratchet effect in a two-dimensional electron system with broken spatial inversion symmetry

Cited by 51 publications

References 27 publications

Nanowire-based thermoelectric ratchet in the hopping regime

Nanowire-based thermoelectric ratchet in the hopping regime

Helicity sensitive terahertz radiation detection by dual-grating-gate high electron mobility transistors

A Methodology to Study the Electromagnetic Behavior of a Cryogenic Metallic System Used to Control the Ratchet Effect

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