Abstract:Boron-doped hydrogenated nanocrystalline silicon (nc-Si:H) thin films were deposited by plasma enhanced chemical vapor deposition (PECVD). Microstructures of these films were characterized and analyzed by Raman spectrum and atomic force microscopy (AFM). Thickness and resistivity of these films was measured by high-resolution profilometer and four-point probe respectively. The impact of annealing on boron-doped nc-Si:H thin films’ resistivity and the relationship between resistivity and microstructure were inv… Show more
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