Experimental investigation and theoretical analysis of the breakdown time delay and jitter of multi-gap gas switch gaps

Abstract

The gas gap of a multi-gap gas switch can be classified as trigger and self-breakdown gaps based on the breakdown condition. A two-gap gas switch consisting of a trigger gap and a self-breakdown gap is developed to independently study the breakdown characteristics of these two types of switch gaps. Trigger experiments for the switch are conducted under various trigger voltage rise rates and different working coefficients. The experimental results indicate that the trigger gap has significantly more jitter than the self-breakdown gap, and the overall performance of the gas switch is determined primarily by the trigger gap. A novel pre-ionization structure with disks is implemented into the two-gap gas switch, considerably decreasing the breakdown delay of the trigger gap and reducing the jitter to a quarter or even less compared to that without pre-ionization. A calculation model of the breakdown time delay for the trigger gap is provided based on the foundational development of the avalanche. The probability distribution of the time required for the initial electron generation is derived in the absence of pre-ionization. The calculated breakdown time delay agrees well with the experimental results in cases with and without pre-ionization under most trigger settings. The method and principle of calculating the breakdown time delay can analyze the collapse of a gas gap with different electrode configurations (quasi-uniform or uniform electrical fields) and various gas media under a nanosecond pulse voltage.

Source–drain switching characteristics when coupled with a gate-controlled DBD in a microplasma switch

“…From the figure, a very small t jitter can be found, by calculation, and the average t jitter is less than 50 ps, indicating good repeatability. Jitter can be affected by the rising edge of the trigger voltage and working coefficient [17]. The working coefficient is closely dependent on the breakdown voltage of the device, which is determined by the device properties and working environment.…”