Experimental Evidence of the Oxygen Dimer in Silicon

Мурин, Л. И.; Hallberg, T.; Маркевич, В. П.; Lindström, J. L.

doi:10.1103/physrevlett.80.93

Cited by 123 publications

(78 citation statements)

References 18 publications

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“…Four LV frequencies at 1060, 1012, 690, and 556 cm 21 assigned to the same configuration of O 2i were recently detected and identified experimentally by Hallberg et al [8] and Murin et al [5]. Murin et al [5] also detected an LV frequency at 1105 cm 21 which they associated with another configuration of O 2i . The subsequent study by Öberg et al [9] using the mixed and pure 18 O !…”

Section: Vibrations Of the Interstitial Oxygen Pairs In Siliconmentioning

confidence: 82%

“…However, aggregation of oxygen takes place at a much lower activation energy of about 1.8 eV [3] and oxygen-containing fast diffusing species are needed to explain the aggregation [4,5]. The interstitial oxygen pairs (O 2i ) have been suggested to be a fast diffusing species [4,5]. The local vibration (LV) frequencies of the structures of O 2i can play an important role as fingerprints in clarifying the aggregation mechanisms of oxygen.…”

Section: Vibrations Of the Interstitial Oxygen Pairs In Siliconmentioning

confidence: 99%

“…Individual oxygen atoms occupying interstitial bond center positions (O i ) are known to diffuse by hopping between the neighboring bond center sites with an activation energy of 2.54 eV in a large temperature range of 300-1200 ± C [1,2]. However, aggregation of oxygen takes place at a much lower activation energy of about 1.8 eV [3] and oxygen-containing fast diffusing species are needed to explain the aggregation [4,5]. The interstitial oxygen pairs (O 2i ) have been suggested to be a fast diffusing species [4,5].…”

Section: Vibrations Of the Interstitial Oxygen Pairs In Siliconmentioning

confidence: 99%

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Vibrations of the Interstitial Oxygen Pairs in Silicon

Pesola

Boehm²,

Nieminen

1999

Phys. Rev. Lett.

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Section: Vibrations Of the Interstitial Oxygen Pairs In Siliconmentioning

confidence: 82%

Section: Vibrations Of the Interstitial Oxygen Pairs In Siliconmentioning

confidence: 99%

Section: Vibrations Of the Interstitial Oxygen Pairs In Siliconmentioning

confidence: 99%

See 1 more Smart Citation

Vibrations of the Interstitial Oxygen Pairs in Silicon

Pesola

Boehm²,

Nieminen

1999

Phys. Rev. Lett.

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“…Almost all models assume an oxygen-containing fastdiffusing species ͑FDS͒ with a low activation energy for migration. 17,18 The model based on oxygen clustering seems to be most attractive because it can consistently explain the second-order process of O i loss 17,19 monitored by infraredabsorption experiments. 18 -20 A popular model used to describe the TDD formation assumes that only the oxygen dimer (O 2 ) acts as a FDS.…”

Section: Introductionmentioning

confidence: 99%

“…Czochralski-grown silicon has a high concentration of oxygen ͑typically 10 18 O atoms/cm 3 ). 1 Individual oxygen atoms occupy interstitial bond-center positions.…”

Section: Introductionmentioning

confidence: 99%

First-principles study of migration, restructuring, and dissociation energies of oxygen complexes in silicon

et al. 2002

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Migration, restructuring, and dissociation energies of oxygen complexes in silicon are studied theoretically through density-functional total-energy calculations. We find that the stablest oxygen complexes are straight chains that also have the lowest migration energies. The calculated migration energies decrease from 2.3 eV for an interstitial oxygen atom (O i ) to low values of 0.4 -1.6 eV for O 2 -O 9 chains and 1.9-2.2 eV for longer chains. The oxygen chains ͑which are thermal double donors͒ are expected to grow so that the migrating oxygen chains capture less-mobile but abundant O i 's: O n ϩO i →O nϩ1 . Restructuring energies of chains with a side O i into straight oxygen chains are 1.9-2.5 eV. Restructuring gives an essential contribution to the fast diffusion. We find that the shorter O 2 -O 9 chains dissociate primarily by ejecting one of the outermost oxygen atoms.

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Decay of oxygen solid solution in plastically deformed silicon

Yarykin

Vdovin

2005

Physica Status Solidi (a)

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Decay of the oxygen solid solution in silicon during annealing at 550–700 °C is studied by the IR absorption technique in the single crystalline samples subjected to the plastic deformation to a high dislocation density at 680 °C. The deformation is shown to significantly enhance the rate of the decay in the whole temperature range studied. Based on the simple model, which assumes the heterogeneous oxygen aggregation at dislocations, the effective oxygen diffusivity is calculated from the experimental data. The activation energy of oxygen diffusion in this temperature range is found to be about 1.6 eV, which is essentially lower than that for the isolated interstitial oxygen atom. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Experimental Evidence of the Oxygen Dimer in Silicon

Cited by 123 publications

References 18 publications

Vibrations of the Interstitial Oxygen Pairs in Silicon

Vibrations of the Interstitial Oxygen Pairs in Silicon

First-principles study of migration, restructuring, and dissociation energies of oxygen complexes in silicon

Decay of oxygen solid solution in plastically deformed silicon

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