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2017
DOI: 10.1039/c7ra00500h
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Experimental evidence of electronic polarization in a family of photo-ferroelectrics

Abstract: Anomalous change in ferroelectric polarization under illumination of monochromatic light.

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Cited by 42 publications
(29 citation statements)
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“…As a consequence of free charge generation by light, the sample becomes leakier FE with apparent increase in the both FE polarization and FE coercive force ( figure 1(b)). The observed light-induced change in the ferroelectric loop largely exceeds in magnitude all previous observations [29,[32][33][34]. The corresponding voltampere characteristics further illustrate the photoinduced change in electric properties ( figure 1(b)).…”
Section: Resultssupporting
confidence: 63%
“…As a consequence of free charge generation by light, the sample becomes leakier FE with apparent increase in the both FE polarization and FE coercive force ( figure 1(b)). The observed light-induced change in the ferroelectric loop largely exceeds in magnitude all previous observations [29,[32][33][34]. The corresponding voltampere characteristics further illustrate the photoinduced change in electric properties ( figure 1(b)).…”
Section: Resultssupporting
confidence: 63%
“…By contrast, the photoinduced increase of the polarization in KNBNNO ceramics has been proven to be constant and reproducible, where loops with the same increase of remanent polarization were obtained in the first six cycles of the measurement (Figure S2b, Supporting Information). The observed increase of the remanent polarization in ferroelectrics under illumination could result from three reasons—localized heating, optically induced charge migration due to increased photoconductivity, and photostimulated domain switching . The localized heating has been excluded in our case because the temperature‐dependent P – E loops showed negligible difference in polarization (Figure S4, Supporting Information).…”
mentioning
confidence: 86%
“…The XRD patterns of as received LAO substrate is given separately in supplementary information (Suppl. [28] compared to the LNO coated rhombohedral LAO substrate (a = 3.79 Å, c = 13.11 Å) [29]. To explore the effect of strain on the ferroelectric and conductivity properties, the strain (Δ) in the films due to lattice mismatch (or misfit) between bulk and thin film was calculated using equation; = × 100, where, Δ is the lattice strain, a bulk is the lattice constant of the bulk, and a film is the lattice constant of the film.…”
Section: X-ray Diffraction (Xrd)mentioning
confidence: 99%