Experimental evidence of correctness of improved model of ferroelectric planar capacitor

Abstract

Intrinsic dead layer effect and the performance of ferroelectric thin film capacitors

Simulation of hysteresis loops for polycrystalline ferroelectrics by an extensive Landau-type model

“…What is the dynamic mechanism during switching a ferroelectric material? It is believed very difficult to model the hysteresis loop due to its nonlinear and history-dependent electric field effects although a number of models [13][14][15][16][17] oversimplified expressions that are insufficient for the unsaturated loops or numerical algorithms that are too complicated to be used for circuit simulation.…”

Microwave properties of film Ba x Sr1 − x TiO3 ferroelectric variconds with a magnesium-containing additive

“…The use of BSTO films with a low concentration of Ba (their phase transition temperature T c falls into the range 150-200 K) in microwave devices allows com bination of high dielectric nonlinearity and low microwave losses [11,12]. To further improve the microwave characteristics of the device, it is necessary to search for process solutions aimed at decreasing the concentration of charged defects in the film or at com pensating for their influence on the electrophysical performance.…”

Modelling the inhomogenity of the ferroelectric layer in a multilayered IDC

“…[6] used an experimental formula for the relation between electric field of the ferroeelctric layer and applied voltage: E = V 2g+ξh 2 ; 0.7 < ξ < 1. Unfortunately, [6] has not mentioned that which values of ξ are suitable for different structures. Fig.…”