2015
DOI: 10.1016/j.elspec.2014.09.005
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Experimental evidence for two-dimensional states localized in subsurface region of Ge(1 1 1)

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Cited by 11 publications
(10 citation statements)
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“…The energy dependence of λ can be discussed in terms of the electron density of states participating the hole relaxation [31]. Since the bulk valence band maximum on the Pb-β √ 3/Ge(111) surface is located at 0.05-0.1 eV below E F [13,15], the bulk density of states starts to increase at this binding energy, which is consistent with the observed energy dependence of λ. The λ value at binding energies below 40 meV was averaged, which yielded 0.47 ± 0.10 for ss 1 and 0.06 +0.10 −0.06 for ss 2 .…”
Section: Resultssupporting
confidence: 70%
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“…The energy dependence of λ can be discussed in terms of the electron density of states participating the hole relaxation [31]. Since the bulk valence band maximum on the Pb-β √ 3/Ge(111) surface is located at 0.05-0.1 eV below E F [13,15], the bulk density of states starts to increase at this binding energy, which is consistent with the observed energy dependence of λ. The λ value at binding energies below 40 meV was averaged, which yielded 0.47 ± 0.10 for ss 1 and 0.06 +0.10 −0.06 for ss 2 .…”
Section: Resultssupporting
confidence: 70%
“…1(b). Although a small Fermi surface due to the subsurface 2D state (ss sub ) is present near¯ [15] as schematically shown in Fig. 1(b), the contribution of the subsurface state to electrical conduction should be only a few percent of that of the Pb-derived surface states because of a much smaller Fermi contour and group velocity.…”
Section: Methodsmentioning
confidence: 98%
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“…1(c)] [45], and Ge(111)- Fig. 1(e)] [46]. Since Br is in the fourth row, the same as Ge, in the periodic table, it is clear that the heavy elements that cover the surface are not essential to the spin polarization observed on these surfaces.…”
Section: γ Surface States Derived From Subsurface Ge Orbitalsmentioning
confidence: 99%
“…Although the intrinsic Ge Rashba spin-splitting of the subsurface states is not strong enough to target room temperature applications, it can be greatly enhanced at the interface between Ge(111) and metals [19][20][21][22] . Hence, beyond providing a way to manipulate the electron spin state, these Rashba states could also be used to generate and detect spin currents in germanium at room temperature, which represents an interesting concept in the field of semiconductor spintronics.…”
Section: Introductionmentioning
confidence: 99%