Experimental evaluation of sensitivity and non-linearity in polysilicon piezoresistive pressure sensors with different diaphragm sizes

Kumar, S. Santosh; Ojha, Anuj Kumar; Pant, B. D.

doi:10.1007/s00542-014-2369-3

Cited by 31 publications

(17 citation statements)

References 16 publications

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“…However, pressure nonlinearity just shows an opposite trend, namely, when the ratio of membrane length/membrane thickness increase, the linearity of the output reduces as shown in Figure 3.32. This phenomenon is consistent with the theory and reported papers [Zhang, 2016], [Kumar, 2016a], [Lin, 2012]. To balance the contradiction between sensitivity and linearity, the final membrane length 3600 μm and thickness 30 μm are determined.…”

Section: Effect Of Size On the Output Performancesupporting

confidence: 90%

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Design and analysis of novel structural geometries for piezoresistive pressure sensors allowing improved measurement sensitivity

Li¹

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MEMS piezoresistive pressure sensors are widely used in automobile, aerospace and petrochemical industries due to their small size, simple reading circuit, batch fabrication capability and low price. However, there are two drawbacks for the traditional structural silicon substrate sensors. One is from the trade-off between sensitivity and linearity which are difficult to be improved simultaneously for the traditional flat membrane. Another is from the leakage current above 125 C temperature across the p-n junction, which will significant degrade the performance. XI TABLE OF CONTENTS

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Section: Effect Of Size On the Output Performancesupporting

confidence: 90%

“… Its mechanical performance is stable and can be integrated into electronics on the same substrate. For example, por n-type piezoresistive can be readily integrated with the silicon substrate [Kumar, 2016a].…”

Section: Piezoresistive Pressure Sensormentioning

confidence: 99%

Design and analysis of novel structural geometries for piezoresistive pressure sensors allowing improved measurement sensitivity

Li¹

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“…high leakage current (Guo et al 2009). Polysilicon based pressure sensors can work at high temperature because the piezoresistors are isolated from each other and from the bulk using an isolating oxide layer (Kumar et al 2014). Silicon-on-insulator (SOI) based pressure sensors also can achieve the purpose of high temperature operation due to the presence of buried oxide layer but they are not as economical as polysilicon based sensors due to high cost of starting substrate.…”

Section: Introductionmentioning

confidence: 99%

Effect of piezoresistor configuration on output characteristics of piezoresistive pressure sensor: an experimental study

Kumar

Pant

2015

Microsyst Technol

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“…For example, sounding measurements require MEMS pressure sensor not only to measure the high pressure at low altitude accurately but also to measure the low pressure in the airspace sensibly. However, there is always a trade-off between sensitivity and linearity in piezoresistive pressure sensors, and the problem of not getting both high sensitivity and linearity is still not well resolved in the wide pressure range [ 7 , 8 , 9 , 10 ]. Thus, the current radiosonde which uses a single pressure sensor usually has different measurement accuracy in two ranges such as 0–50 kPa and 50–100 kPa.…”

Section: Introductionmentioning

confidence: 99%

“…Thus, the current radiosonde which uses a single pressure sensor usually has different measurement accuracy in two ranges such as 0–50 kPa and 50–100 kPa. The reason is as follows: To meet the very-low-pressure measurement requirement, the load-deflection response of the MEMS pressure sensor is generally maximized by increasing the width and thickness ratio of the diaphragm to achieve higher sensitivity [ 8 , 9 ]. In the case, the non-linearity of the pressure-sensitive film under high pressure is significantly increased and the stability and accuracy of the sensor is compromised [ 10 ].…”

Section: Introductionmentioning

confidence: 99%

Design, Fabrication, and Implementation of an Array-Type MEMS Piezoresistive Intelligent Pressure Sensor System

Zhang

Chen

et al. 2018

Micromachines

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To meet the radiosonde requirement of high sensitivity and linearity, this study designs and implements a monolithically integrated array-type piezoresistive intelligent pressure sensor system which is made up of two groups of four pressure sensors with the pressure range of 0–50 kPa and 0–100 kPa respectively. First, theoretical models and ANSYS (version 14.5, Canonsburg, PA, USA) finite element method (FEM) are adopted to optimize the parameters of array sensor structure. Combing with FEM stress distribution results, the size and material characteristics of the array-type sensor are determined according to the analysis of the sensitivity and the ratio of signal to noise (SNR). Based on the optimized parameters, the manufacture and packaging of array-type sensor chips are then realized by using the standard complementary metal-oxide-semiconductor (CMOS) and microelectromechanical system (MEMS) process. Furthermore, an intelligent acquisition and processing system for pressure and temperature signals is achieved. The S3C2440A microprocessor (Samsung, Seoul, Korea) is regarded as the core part which can be applied to collect and process data. In particular, digital signal storage, display and transmission are realized by the application of a graphical user interface (GUI) written in QT/E. Besides, for the sake of compensating the temperature drift and nonlinear error, the data fusion technique is proposed based on a wavelet neural network improved by genetic algorithm (GA-WNN) for average measuring signal. The GA-WNN model is implemented in hardware by using a S3C2440A microprocessor. Finally, the results of calibration and test experiments achieved with the temperature ranges from −20 to 20 °C show that: (1) the nonlinear error and the sensitivity of the array-type pressure sensor are 8330 × 10−4 and 0.052 mV/V/kPa in the range of 0–50 kPa, respectively; (2) the nonlinear error and the sensitivity are 8129 × 10−4 and 0.020 mV/V/kPa in the range of 50–100 kPa, respectively; (3) the overall error of the intelligent pressure sensor system is maintained at ±0.252% within the hybrid composite range (0–100 kPa). The involved results indicate that the developed array-type composite pressure sensor has good performance, which can provide a useful reference for the development of multi-range MEMS piezoresistive pressure sensor.

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Experimental evaluation of sensitivity and non-linearity in polysilicon piezoresistive pressure sensors with different diaphragm sizes

Cited by 31 publications

References 16 publications

Design and analysis of novel structural geometries for piezoresistive pressure sensors allowing improved measurement sensitivity

Design and analysis of novel structural geometries for piezoresistive pressure sensors allowing improved measurement sensitivity

Effect of piezoresistor configuration on output characteristics of piezoresistive pressure sensor: an experimental study

Design, Fabrication, and Implementation of an Array-Type MEMS Piezoresistive Intelligent Pressure Sensor System

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