Experimental electro-mechanical static characterization of IGBT bare die under controlled temperature

Abstract

a b s t r a c tSilicon dice soldered in power assemblies have to withstand simultaneously electrical, thermal and mechanical stress. Mechanical stress is an important issue because it will directly impact on both the device behavior and power modules reliability. This paper focuses on the electro-mechanical static characterization of a planar gate IGBT by the help of experiments at controlled temperatures. A specific test bench is proposed to make the experiments on silicone bare dice. It can be highlighted that mechanical stresses have a strong influence on the electrical characteristics of IGBT and this effect is independent from the die temperature. These properties might be a key point to point out an early failure indicator to improve design of the power module.

Electromechanical characterization of “flying” Planar Gate Punch Through IGBT bare die

“…Before starting the experiments, it is necessary to determine the maximum stress values that can be reached on the IGBT die under test without breaking the silicon strip. For the two configurations shown previously, we have experimentally obtained the results presented in [16]. By setting up L = 6cm and a = 1cm, it is possible to obtain a maximum displacement along y-axis of 1.1mm in compressive configuration while in tensile configuration it is 2mm.…”

“…More details are presented in [16] as for a given temperature breakdown voltage is not influenced by the mechanical stress applied on the tested IGBT, with high temperatures, the blocking voltage increases. In this paper, we have proposed an electro-mechanical characterization for a planar gate punch through IGBT operating under static operating configurations.…”