Experimental determination of the pressure dependence of the barrier height of metal/[n-type GaAs] Schottky contacts: A critical test of Schottky-barrier models

Pressure dependence of Cu, Ag, andFe/n−GaAsSchottky barrier heights

“…Recently, Phatak et al were able to rule out MIGS's as the dominant mechanism in Fermi-level pinning for Au/n-GaAs ͑110͒ Schottky contacts based on experimental determinations of the pressure dependence of the barrier height. 19 Similar measurements on Al/GaAs ͑110͒ found that this interface tracked the predictions of ideal defect-free interfaces. 19 Bardi et al 21 used theoretical calculations of d⌽ b /dP to show that the experimental results of Dobaczewski et al on Al/Ga 1Ϫx Al x As͑100͒ interfaces 20 are also consistent with those expected for ideal defect-free interfaces.…”

“…19 Similar measurements on Al/GaAs ͑110͒ found that this interface tracked the predictions of ideal defect-free interfaces. 19 Bardi et al 21 used theoretical calculations of d⌽ b /dP to show that the experimental results of Dobaczewski et al on Al/Ga 1Ϫx Al x As͑100͒ interfaces 20 are also consistent with those expected for ideal defect-free interfaces. 21 The experimental measurements and theoretical calculations of d⌽ b /dP for Au/GaAs ͑110͒ provide the groundwork to analyze d⌽ b /dP of other metals on GaAs ͑110͒.…”

“…The experimentally measured d⌽ B /dP of Cu and Ag on UHV cleaved (110)n-GaAs fall within the uncertainty of the experimentally measured pressure dependence of the As Ga defect, 24-26 the experimentally measured d⌽ B /dP of Au on UHV cleaved (110)n-GaAs, 19 and the theoretically calculated d⌽ B /dP of both Au and Pt/GaAs ͑110͒ interfaces decorated with As Ga defects. 18 The experimental uncertainty of d⌽ B /dP of Cu and Ag/n-GaAs͑110͒ lies outside the theoretically calculated d⌽ B /dP of ideal defect-free Au and Pt/GaAs͑110͒ interfaces.…”

“…This is the same procedure described in our earlier work. 19 The larger error bound reported for the d⌽ B /dP of Fe/GaAs͑100͒ diodes arises primarily from the smaller range in pressure used than for other diodes in this study.…”

Evaluation of the hydrostatic pressure effect on Mn/p-Si Schottky barrier diode electrical parameters and interface states

“…van Schilfgaarde et al [34] have reported theoretically that the pressure coefficient of the SBH is different for metal/semiconductor interfaces with and without defects. Phatak et al [35] successfully explained the pressureinduced changes in the Fermi level pinning by defect mediated models in a Au/n-GaAs diode. Werner [36] and Werner and Güttler [37] concluded that the temperature or pressure coefficients of the SBH depend on the chemical nature of the contact metal and a strong influence of interface crystallography.…”