Experimental determination of the incorporation factor of As4 during molecular beam epitaxy of GaAs

Surface morphology of homoepitaxial GaSb films grown on flat and vicinal substrates

“…This type of qualitative change in the growth behavior with increasing temperature has also been observed recently in film stability studies comparing the effect of As 4 versus As 2 on InAs/ GaSb superlattices [34]. Unfortunately, studies detailing the group V incorporation mechanisms on (0 0 1) surfaces have revolved primarily around GaAs growth [26,28,[37][38][39], with little attention having been devoted towards antimonides. Although some kinetic models of the As incorporation kinetics have been fit reasonably well for GaAs for limited scenarios, it is still unclear if analogous mechanisms even exist for antimonide growth.…”

Variation of lattice constant and cluster formation in GaAsBi

“…The atomic As/Ga flux ratio was 1.6 for GaAsBi and 3 for LT-GaAs. The flux ratios were determined from ion gauge readings as described by Preobrazhenskii et al 18 The nominal Bi flux was the same for all samples. The as-grown samples were cut in 4 Â 4 mm chips, which were annealed in a RTA oven between 500 C and 800 C for 60 s in a flowing nitrogen environment.…”

Surface reconstructions during growth of GaAs1−xBix alloys by molecular beam epitaxy

“…As 2 :Ga flux ratios were calculated as described in Refs. [8,9] and the absolute Ga flux was determined from the growth rate. Bi is known to evaporate as a combination of monomers and dimers in nearly equal amounts [10].…”

“…Surface reconstructions were recorded for various substrate temperatures in the range of 250-450 1C, while varying the As 2 :Ga flux ratio from 0 to 2.82. (An As 2 :Ga flux ratio of 2.82 is equivalent to a As 2 :Ga BEP ratio of 9.4 [8].) These measurements were performed without incident Bi flux, as well as for a series of different Bi fluxes.…”