Experimental determination of the energy distribution of ions bombarding the cathode surface in a glow discharge

Straaten, Mark van; Bogaerts, Annemie; Gijbels, R.

doi:10.1016/0584-8547(94)00158-r

Cited by 24 publications

(17 citation statements)

References 10 publications

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“…Indeed, as was shown in Figure 6.18a and b, the copper ion energy distribution has a distinct peak at maximum energy, and since the sputtering efficiency increases with rising energy of the bombarding species, it can indeed be expected that the copper ions have a non-negligible contribution in spite of their lower flux. This was also suggested earlier, based on experimental results [58].…”

Section: Information About Sputtering At the Cathodesupporting

confidence: 51%

“…Therefore, they are characterized by a pronounced peak at maximum energy. This pronounced peak is also experimentally observed ( Figure 6.18b) [58]. These experiments were performed with the same technique as explained above.…”

Section: Energies Of the Plasma Speciesmentioning

confidence: 58%

“…The energy distribution of the argon ions bombarding the cathode has been measured in a similar cell, in reversed geometry so that the ions are sampled through a hole in the cathode, and under similar discharge conditions to those used for the calculations [58]. These measurements were performed with the VG 9000 double focusing glow discharge mass spectrometer, by keeping the magnetic field constant and varying the acceleration voltage.…”

Section: Energies Of the Plasma Speciesmentioning

confidence: 99%

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Numerical Modeling of Analytical Glow Discharges

Bogaerts

Gijbels

2002

Glow Discharge Plasmas in Analytical Spectroscopy

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Section: Information About Sputtering At the Cathodesupporting

confidence: 51%

Section: Energies Of the Plasma Speciesmentioning

confidence: 58%

Section: Energies Of the Plasma Speciesmentioning

confidence: 99%

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Numerical Modeling of Analytical Glow Discharges

Bogaerts

Gijbels

2002

Glow Discharge Plasmas in Analytical Spectroscopy

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“…So, with an experimental value of L/λ of 25 (see Davis and Vanderslice [24]), we can conclude that essentially no ions arrive at the target with energy equal to the applied target voltage. Experiments and simulation on this topic are also described by Bogaerts et al [25] [26]. While the sputter yield is determined by the energy and mass of the ions at the target, the sputtering rate of the target depends on the total power.…”

Section: ( )mentioning

confidence: 99%

Sputter Deposition Processes

Depla

Mahieu

Greene

2010

Handbook of Deposition Technologies for Films and Coatings

124

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Sputter deposition is a widely used technique to deposit thin films on substrates. The technique is based upon ion bombardment of a source material, the target. Ion bombardment results in a vapor due to a purely physical process, i.e. the sputtering of the target material. Hence, this technique is part of the class of physical vapor deposition techniques, which includes, for example, thermal evaporation and pulsed laser deposition. The most common approach for growing thin films by sputter deposition is the use of a magnetron source in which positive ions present in the plasma of a magnetically enhanced glow discharge bombard the target. This popular technique forms the focus of this chapter. The target can be powered in different ways, ranging from dc for conductive targets, to rf for nonconductive targets, to a variety of different ways of applying current and/or voltage pulses to the target. Since sputtering is a purely physical process, adding chemistry to, for example, deposit a compound layer must be done ad hoc through the addition of a reactive gas to the plasma, i.e. reactive sputtering. The undesirable reaction of the reactive gas with the target material results in a non-linear behavior of the deposition parameters as a function of the reactive gas flow. To model this behavior, the fluxes of the various species towards the target must be determined. However, equally important are the fluxes of species incident at the substrate because they not only influence the reactive sputter deposition process, but also control the growth of the desired film. Indeed, the microstructure of magnetron sputter deposited films is defined by the identity of the particles arriving at the substrate, their fluxes and the energy per particle.

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“…[31][32][33][34] For hydrogen discharges, the model must deal with three positive ions H + , H 2 + , and H 3 + and two fast neutral specie: H atoms and H 2 molecules formed from charge exchange. All these models emphasize the complexity of the discharges resulting from the presence of the multispecie ions.…”

Section: A Velocity Distribution Of H + H 2 + and H 3 +mentioning

confidence: 99%

Signature of fast H atoms from cathode glow region of a dc discharge

et al. 2009

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Asymmetric broadening of H ␣ line from cathode glow region has been studied. In the cathode glow, mean energy and fractional population of very fast hydrogen atoms were found to be ϳ130 eV and ϳ55%, respectively. These values reduced to ϳ90 eV and ϳ20% when measured at negative glow region. The observed asymmetry was attributed to the presence of the fast hydrogen atoms near the cathode surface. The mean energy and number density of excited fast hydrogen atoms were estimated from the velocity distribution of H + , H 2 + , and H 3 + considering collisions inside the cathode sheath. The reduction in the mean energy and number density of the excited fast hydrogen atoms, at the other locations of the discharge, was explained by energy relaxation and thermalization of the neutrals with the background gas.

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Experimental determination of the energy distribution of ions bombarding the cathode surface in a glow discharge

Cited by 24 publications

References 10 publications

Numerical Modeling of Analytical Glow Discharges

Numerical Modeling of Analytical Glow Discharges

Sputter Deposition Processes

Signature of fast H atoms from cathode glow region of a dc discharge

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