Experimental Demonstration of Pattern Influence on DRAM SEU and SEFI Radiation Sensitivities

Bougerol, A.; Miller, F.; Guibbaud, N.; Leveugle, Régis; Carrière, T.; Buard, N.

doi:10.1109/tns.2011.2107528

Cited by 9 publications

(3 citation statements)

References 13 publications

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“…The SEU mainly occurs by a charge collection within the memory binary cell caused by a particle strike occurring in, or close to, the storage capacitor or the access transistor [22], [23]. The cell upsets occur through a charge collection by the bias junction of a cell-access transistor, increasing the charge on the storage capacitor, and by charge transfer due to a low-resistive path created by an ionizing particle, which moves electrons from a low-voltage node to a high-voltage node [24]. Also, upsets can be caused by a charge collection in the pre-charged bit line during a memory access, introducing an imbalance in the sensing signal during or before the sensing operation [22].…”

Section: Radiation-induced Effects On Memoriesmentioning

confidence: 99%

Impact of Atmospheric and Space Radiation on Sensitive Electronic Devices

Luza

Wrobel

Entrena

et al. 2022

2022 IEEE European Test Symposium (ETS)

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Studying the radiation effects on electronic devices is essential for avionics and space systems. The shrinking technology nodes and increasing density of devices enhance the sensitivity of electronic systems to ionizing radiation. Due to their crucial role, memories and processors are the highest contributors to soft errors in systems, making them the best candidates for studying these effects. This work introduces the radiation environment in space and atmosphere and the main effects that the different types of ionizing particles that are present in these environments may produce on electronic devices. Furthermore, mainly focusing on Single-Event Effects (SEEs), it presents approaches and tools for modeling SEEs and their impact on memories and microprocessors. Additionally, experimental results targeting a Commercial-Off-The-Shelf self-refresh Dynamic RAM are presented. These experiments are based on radiation test campaigns in particle accelerators with neutrons and protons. Finally, an overview of issues and mitigation techniques for microprocessors is exposed.

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Section: Radiation-induced Effects On Memoriesmentioning

confidence: 99%

Impact of Atmospheric and Space Radiation on Sensitive Electronic Devices

Luza

Wrobel

Entrena

et al. 2022

2022 IEEE European Test Symposium (ETS)

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“…Control logic is one of the most important parts of the memory, with the role to manage several signals and decode instructions coming from the processor. The particle hitting the control logic can cause SEU/MBU that results in clear content in the affected memory bank [19]. This effect may be extremely critical.…”

Section: Clear Content In the Memorymentioning

confidence: 99%

Analysis of Single Event Effects on Embedded Processor

et al. 2021

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The continuous scaling of electronic components has led to the development of high-performance microprocessors which are even suitable for safety-critical applications where radiation-induced errors, such as single event effects (SEEs), are one of the most important reliability issues. This work focuses on the development of a fault injection environment capable of analyzing the impact of errors on the functionality of an ARM Cortex-A9 microprocessor embedded within a Zynq-7000 AP-SoC, considering different fault models affecting both the system memory and register resources of the embedded processor. We developed a novel Python-based fault injection platform for the emulation of radiation-induced faults within the AP-SoC hardware resources during the execution of software applications. The fault injection approach is not intrusive, and it does not require modifying the software application under evaluation. The experimental analyses have been performed on a subset of the MiBench benchmark software suite. Fault injection results demonstrate the capability of the developed method and the possibility of evaluating various sets of fault models.

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“…Examples of logic SEFIs are "fuse latch upsets" also called SEFLUs (Bougerol et al 2010(Bougerol et al , 2011) that lead to the wrong addressing of a whole row/column. Manufacturers are experiencing an increasing number of defective cells, therefore adding spare cells and exposing them to reliability tests.…”

Section: Single Event Functional Interrupt (Sefi)mentioning

confidence: 99%

Resilient computer system design

Castaño

Schagaev

2015

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Experimental Demonstration of Pattern Influence on DRAM SEU and SEFI Radiation Sensitivities

Cited by 9 publications

References 13 publications

Impact of Atmospheric and Space Radiation on Sensitive Electronic Devices

Impact of Atmospheric and Space Radiation on Sensitive Electronic Devices

Analysis of Single Event Effects on Embedded Processor

Resilient computer system design

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