Experimental Demonstration of a 98.8% Efficient Isolated DC–DC GaN Converter

Ramachandran, Rakesh; Nymand, Morten

doi:10.1109/tie.2016.2613930

Cited by 84 publications

(27 citation statements)

References 35 publications

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“…Ramachandran and Nymand designed an ultra-high-efficiency 130/52/50-V, 2.4-kW, 50-kHz full-bridge converters in Reference [55] by paralleling GaN HEMTs and adopting high-efficiency magnetics and synchronous rectification methods. The designed converter was later demonstrated in Reference [56]. A peak efficiency of 98.8% was measured at 1.3-kW output in the former prototype, and a power density of 7 kW/L and efficiency more than 98.5% over a wide range of output power were achieved with the latter prototype.…”

Section: Isolated Dc-dc Convertersmentioning

confidence: 98%

Review of GaN HEMT Applications in Power Converters over 500 W

2019

Electronics

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Because of the global trends of energy demand increase and decarbonization, developing green energy sources and increasing energy conversion efficiency are recently two of the most urgent topics in energy fields. The requirements for power level and performance of converter systems are continuously growing for the fast development of modern technologies such as the Internet of things (IoT) and Industry 4.0. In this regard, power switching devices based on wide-bandgap (WBG) materials such as silicon carbide (SiC) and gallium nitride (GaN) are fast maturing and expected to greatly benefit power converters with complex switching schemes. In low- and medium-voltage applications, GaN-based high-electron-mobility transistors (HEMTs) are superior to conventional silicon (Si)-based devices in terms of switching frequency, power rating, thermal capability, and efficiency, which are crucial factors to enhance the performance of advanced power converters. Previously published review papers on GaN HEMT technology mainly focused on fabrication, device characteristics, and general applications. To realize the future development trend and potential of applying GaN technology in various converter designs, this paper reviews a total of 162 research papers focusing on GaN HEMT applications in mid- to high-power (over 500 W) converters. Different types of converters including direct current (DC)–DC, alternating current (AC)–DC, and DC–AC conversions with various configurations, switching frequencies, power densities, and system efficiencies are reviewed.

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Section: Isolated Dc-dc Convertersmentioning

confidence: 98%

Review of GaN HEMT Applications in Power Converters over 500 W

2019

Electronics

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“…This requires a minimum current (I on,min ) of the inductive component (L), that charges/discharges output capacitances within the dead-time. The required energy of the inductance for ZVS can be derived for the energy balance (11).…”

Section: Conditions For Soft-switchingmentioning

confidence: 99%

“…This means that the top side switch turns-on before the resonant transition with a voltage ∆V d . As it is analyzed in [18] ∆V d can be calculated solving the energy balance (11) and then obtaining the delivered energy for the incomplete ZVS…”

Section: Conditions For Soft-switchingmentioning

confidence: 99%

“…Topologies such as dual active bridge [5], totem pole [6] or full-bridge [7] are proposed, achieving high power densities (> 8 kW/l) as it is presented in [8], [9]. Furthermore, in medium/high power converters (> 2 kW), multiple GaN devices are paralleled [10], [11] or interleaved [8], [9], [12]- [14], usually with soft switching operation. However, there is not an established tendency for GaN devices for medium/high power solutions, as it can be observed from Fig.…”

Section: Introductionmentioning

confidence: 99%

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Analysis of Optimal Operation Conditions for GaN-based Power Converters

Avila¹,

Garcia-Bediaga²,

Rodríguez

et al. 2018

2018 IEEE Energy Conversion Congress and Exposition (ECCE)

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The use of Gallium Nitride (GaN) devices allows breaking the performance barriers of conventional silicon-based (Si) low power converters by increasing the operating frequency while reducing system power losses. This paper evaluates the influence of the current ripple, switching frequency and number of GaN devices on the performance of a bi-directional buck converter. Furthermore, hard-switching and soft-switching operation modes are evaluated, identifying the optimal operation conditions for GaN-based power converters. Analytical and simulation models are employed and the obtained results are experimentally validated on a 3 kW GaN-based bi-directional buck converter.

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“…Efficiency is an essential factor for evaluating the performance of power conversion systems (PCSs). Recently, owing to the development of next-generation power electronic devices, such as gallium nitride (GaN) and silicon carbide (SiC) devices, many DC-DC converters have achieved a peak efficiency of 98-99% [1][2][3]. However, in an inductive power transfer (IPT) system for electric vehicles (EVs), the peak efficiency from the DC link to the DC battery load is still 95-96%, and load-average efficiency, which is averaged over the entire range of output power, is much lower than the typical DC-DC converters [4][5][6][7][8].…”

Section: Introductionmentioning

confidence: 99%

Integrated Control Strategy for Inductive Power Transfer Systems with Primary-Side LCC Network for Load-Average Efficiency Improvement

et al. 2019

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An inductive power transfer (IPT) system has lower peak efficiency and significantly lower load-average efficiency over the entire range of output power than typical power conversion systems because it transmits power wirelessly through magnetically coupled coils. In order to improve the load-average efficiency of the IPT system, this paper proposes an integrated control strategy consisting of full-bridge, phase-shift, and half-bridge control modes. The coupling coefficient and output power conditions for each control mode are theoretically analyzed, and the proposed control algorithm is established. In order to verify the analysis results, a 3.3 kW IPT system prototype is constructed, and it is experimentally verified that the load-average efficiency is improved by up to 3.75% with respect to the output power when using the proposed control scheme. In addition, the proposed control has the additional advantage that it can be directly applied to the existing IPT system without changing or adding hardware.

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Experimental Demonstration of a 98.8% Efficient Isolated DC–DC GaN Converter

Cited by 84 publications

References 35 publications

Review of GaN HEMT Applications in Power Converters over 500 W

Review of GaN HEMT Applications in Power Converters over 500 W

Analysis of Optimal Operation Conditions for GaN-based Power Converters

Integrated Control Strategy for Inductive Power Transfer Systems with Primary-Side LCC Network for Load-Average Efficiency Improvement

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