2015
DOI: 10.1109/jestpe.2014.2381001
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Experimental Comparison of a Direct Matrix Converter Using Si IGBT and SiC MOSFETs

Abstract: A note on versions:The version presented here may differ from the published version or from the version of record. If you wish to cite this item you are advised to consult the publisher's version. Please see the repository url above for details on accessing the published version and note that access may require a subscription.For more information, please contact eprints@nottingham.ac.uk

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Cited by 35 publications
(20 citation statements)
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“…For comparison purposes, both the IMC and DMC prototypes were modulated using an identical, symmetrical space vector modulation (SVM) scheme as described fully in [22] and [23]. This uses 4 active vectors and 3 different null vectors during each switching period (T p ) with a converter switching frequency (F sw =1/T p ) [20], this method results in there being 12 hard commutations per switching period for both types of converter. Table II shows the modulation scheme in more detail for each converter where the hard and soft commutations are highlighted using red and blue lines respectively.…”
Section: Measurement System Configurationmentioning
confidence: 99%
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“…For comparison purposes, both the IMC and DMC prototypes were modulated using an identical, symmetrical space vector modulation (SVM) scheme as described fully in [22] and [23]. This uses 4 active vectors and 3 different null vectors during each switching period (T p ) with a converter switching frequency (F sw =1/T p ) [20], this method results in there being 12 hard commutations per switching period for both types of converter. Table II shows the modulation scheme in more detail for each converter where the hard and soft commutations are highlighted using red and blue lines respectively.…”
Section: Measurement System Configurationmentioning
confidence: 99%
“…Accordingly the models are further developed to use data based on average values found during experimentation; this model is similar to [25]- [27] and it does not consider the effect of dead time and the commutation delay time on the conduction losses since this is a very small part of the conduction period for any particular switch. For the DMC the complete analysis is done in [20] so it is not reported here.…”
Section: Analitical Model Of the Lossesmentioning
confidence: 99%
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“…The losses in a MC are not function of the modulation index (ratio between output/input voltages), but only of the output current [9]. In an IMC the losses are also function of the modulation index and the type of modulation used.…”
Section: Experimental Tests For the Devices Thermal Cyclingmentioning
confidence: 99%
“…Hence the use of SiC devices can lead to a reduction in the input filter weight and volume for a given input power quality as well as improvements in converter efficiency, which in turn leads to reduced heat sink size and weight. Some scientific papers, which consider the design and construction of DMCs [7]- [9] and IMCs [10]- [12], in particular utilizing SiC JFETs and SiC MOSFETs [11], have recently appeared in scientific literature. Moreover in [5] authors report an experimental comparison of the two Matrix Converter topologies using traditional Si IGBTs and diodes based on the converters efficiency.…”
Section: Introductionmentioning
confidence: 99%