Experimental characterization methods for power MOSFET assemblies

Wernicke, T.; Dieckerhoff, Sibylle; Kirfe, T.; Feix, Gudrun; Guttowski, Stephan; Reichl, H.

doi:10.1109/epe.2007.4417633

Cited by 3 publications

(2 citation statements)

References 6 publications

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“…Part of the work has originally been presented at the IEEE PESC Conference 2007 [13] and the EPE Conference 2007 [16]. This article gives a comprehensive summary of the results.…”

Section: Acknowledgmentmentioning

confidence: 99%

Improved Switching Characteristics of Fast Power MOSFETs Applying Solder Bump Technology

Dieckerhoff

Wernicke

Kallmayer

et al. 2008

International Journal of Power Management Electronics

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The impact of a reduced package stray inductance on the switching performance of fast power MOSFETs is discussed applying advanced 3D packaging technologies. Starting from an overview over new packaging approaches, a solder bump technology using a flexible PI substrate is exemplarily chosen for the evaluation. Measurement techniques to determine the stray inductance are discussed and compared with a numerical solution based on the PEEC method. Experimental results show the improvement of the voltage utilization while there is only a slight impact on total switching losses.

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“…Part of the work has originally been presented at the IEEE PESC Conference 2007 [13] and the EPE Conference 2007 [16]. This article gives a comprehensive summary of the results.…”

Section: Acknowledgmentmentioning

confidence: 99%

Improved Switching Characteristics of Fast Power MOSFETs Applying Solder Bump Technology

Dieckerhoff

Wernicke

Kallmayer

et al. 2008

International Journal of Power Management Electronics

Self Cite

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“…However, when one aims to precisely evaluate disturbances, the usual models need to be more detailed. Electrical components in particular have to be described with all their stray elements including the ones due to the integration in the complex electromagnetic environment [3][4][5]. This increasing complexity of models unfortunately directly impacts on the time of simulation that can become unreasonably long.…”

Section: Introductionmentioning

confidence: 99%

Fast Reconstitution Method (FRM) to Compute the Broadband Spectrum of Common Mode Conducted Disturbances

Labrousse

Revol²,

Gautier³

et al. 2013

IEEE Trans. Electromagn. Compat.

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Abstract-This paper deals with time domain simulation of common mode (CM) conducted disturbances in power electronics. The study proposes a proof of concept of a Fast Reconstruction Method (FRM) which allows to compute the spectrum of a common mode current based on the knowledge of a single pulse of current (i.e. the knowledge of the disturbances on a small fraction of time) and of the switching instants (i.e. the control strategy of the structure). The first parts of the paper demonstrate the reliability of the method using data measurements of a common mode current generated by a PWM half bridge converter and then by a three phase inverter. The simulation time saved thanks to the FRM is then quantified by comparing the simulation durations with or without using the FRM. In our example, the FRM allows to divide the simulation time by about 10.This analysis points out that the complex information of a CM current is contained in a small time interval. As a consequence the complete spectrum can be predicted with only a very fast simulation. The mathematical techniques developed here forecast promising reduction of simulation durations.

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Analysis and Comparison of Turn-off Active Gate Control Methods for Low-Voltage Power MOSFETs With High Current Ratings

Wittig

Fuchs

2012

IEEE Trans. Power Electron.

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Experimental characterization methods for power MOSFET assemblies

Cited by 3 publications

References 6 publications

Improved Switching Characteristics of Fast Power MOSFETs Applying Solder Bump Technology

Improved Switching Characteristics of Fast Power MOSFETs Applying Solder Bump Technology

Fast Reconstitution Method (FRM) to Compute the Broadband Spectrum of Common Mode Conducted Disturbances

Analysis and Comparison of Turn-off Active Gate Control Methods for Low-Voltage Power MOSFETs With High Current Ratings

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