Experimental band structure of GaSe obtained by angular resolved photoemission

Thiry, P.; Pétroff, Y.; Pinchaux, R.; Guillot, Claude; Ballu, Y.; Lecante, J.; Paigné, J.; Lévy, F.

doi:10.1016/0038-1098(77)90250-2

Cited by 31 publications

(3 citation statements)

References 7 publications

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“…Experimental works in angle-resolved photoemission by Larsen et al 17 and Amokrane et al 18 on InSe, Thiry et al 19 and Plucinski et al 20 on GaSe, as well as angleresolved inverse photoemission by Sporken et al 21 on both GaSe and InSe provided precious benchmarks for many subsequent calculations of electron band dispersions.…”

Section: Previous Studiesmentioning

confidence: 99%

Comparative study of structural and electronic properties of GaSe and InSe polytypes

Srour

Badawi

Hassan

et al. 2018

The Journal of Chemical Physics

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Equilibrium crystal structures, electron band dispersions, and bandgap values of layered GaSe and InSe semiconductors, each being represented by four polytypes, are studied via first-principles calculations within the density functional theory. A number of practical algorithms to take into account dispersion interactions are tested, from empirical Grimme corrections to many-body dispersion schemes. Due to the utmost technical accuracy achieved in the calculations, nearly degenerate energy-volume curves of different polytypes are resolved, and the conclusions concerning the relative stability of competing polytypes drawn. The predictions are done as for how the equilibrium between different polytypes will be shifted under the effect of hydrostatic pressure. The band structures are inspected under the angle of identifying features specific for different polytypes and with respect to modifications of the band dispersions brought about by the use of modified Becke-Johnson (mBJ) scheme for the exchange-correlation potential. As another way to improve the predictions of bandgaps values, hybrid functional calculations according to the HSE06 scheme are performed for the band structures, and the relation with the mBJ results are discussed. Both methods nicely agree with the experimental results and with state-of-the-art GW calculations. Some discrepancies are identified in cases of close competition between the direct and indirect gap (e.g., in GaSe); moreover, the accurate placement of bands revealing relatively localized states is slightly different according to mBJ and HSE06 schemes.

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Section: Previous Studiesmentioning

confidence: 99%

Comparative study of structural and electronic properties of GaSe and InSe polytypes

Srour

Badawi

Hassan

et al. 2018

The Journal of Chemical Physics

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“…But in regions I a and II our measurements for peaks B and C reveal opposite electron spin polarization. This discrepancy indicates that the often used model of free electron final state bands 33 does not apply to GaSe. In order to obtain positive electron spin polarization for peak B, relativistic dipole selection rules demand transitions from the initial states ⌬ 9 6 , ⌬ 9 5 to final states with low symmetries ⌬ 7 5 , ⌬ 8 6 as shown in Table I.…”

Section: Resultsmentioning

confidence: 99%

“…The energy scale of the spectra gives the initialstate energy with the VBM defining the zero of the energy. 33 In the spectra, besides the spin-independent total intensity I, the spin-separated partial intensities I ϩ and I Ϫ ͑thick and thin lines in Fig. 2, respectively͒ totally spin polarized parallel and antiparallel to the photon spin, are given, respectively.…”

Section: Band Structure Calculationmentioning

confidence: 99%

Band symmetries of GaSe(0001) studied by spin-resolved electron spectroscopy using circularly polarized radiation

Müller

Heinzmann

et al. 2004

Phys. Rev. B

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We have studied the symmetry properties of the bands of the layered semiconductor GaSe along the ⌬ direction by means of spin-resolved electron spectroscopy using circularly polarized synchrotron radiation and by means of a relativistic LAPW band-structure calculation. The photoelectron spectra show in the main a pair of weakly dispersing peaks caused by direct transitions from valence-band states with symmetries ⌬ 9 5 , ⌬ 9 6 and ⌬ 7 5 , ⌬ 8 6 . Our data determine the spin-orbit splitting of these valence bands to be ⌬E so ϭ0.3Ϯ0.1 eV. We find a gap in the unoccupied bands along ⌬ about 8 eV above the fundamental gap. The analysis of the photoelectron spin polarization reveals that also unoccupied states with low symmetries ⌬ 7 5 , ⌬ 8 6 and ⌬ 9 5 , ⌬ 9 6 are involved in excitation and emission. Spin resolved spectra measured at Auger electrons following the decay of Ga 3d core holes confirm that p derived unoccupied states exists below the vacuum level.

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Angle Resolved Photoemission and Electronic Band Structure of MoS₂

Boufelja

Carricaburu

1987

Physica Status Solidi (b)

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Angle-resolved photoemission measurements are performed on the layer compound MoS, at 21.2 and 40.8 eV excitation energies. It is shown the applicability of the E(kl1) method in the framework of a non-direct transition regime. An experimental band scheme is proposed. Good agreement with band structure calculations is found except for some of them in the relative position of the d and p upper valence bands, which is here clearly ascertained.Nous presentons les resultats de mesures de photoemission angulaire sur le compose lamellaire MoS, aux energies d'excitations d e 21,2 e t 40,8 eV. Nous avons montr6 la bonne applicabiliti: de la m6thode E(kl1) dans le cadre d'un regime de transitions directes. Nous proposons une structure de bandes exp6rimentales. Nous trouvons un bon accord avec les structures de bandes calculees sauf pour certaines d'entre elles en ce qui concerne la position relative des bandes de valence superieures d e t p qui est ici clairement pr6cis6e.

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Experimental band structure of GaSe obtained by angular resolved photoemission

Cited by 31 publications

References 7 publications

Comparative study of structural and electronic properties of GaSe and InSe polytypes

Comparative study of structural and electronic properties of GaSe and InSe polytypes

Band symmetries of GaSe(0001) studied by spin-resolved electron spectroscopy using circularly polarized radiation

Angle Resolved Photoemission and Electronic Band Structure of MoS₂

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Experimental band structure of GaSe obtained by angular resolved photoemission

Cited by 31 publications

References 7 publications

Comparative study of structural and electronic properties of GaSe and InSe polytypes

Comparative study of structural and electronic properties of GaSe and InSe polytypes

Band symmetries of GaSe(0001) studied by spin-resolved electron spectroscopy using circularly polarized radiation

Angle Resolved Photoemission and Electronic Band Structure of MoS2

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Angle Resolved Photoemission and Electronic Band Structure of MoS₂