2021
DOI: 10.1016/j.mssp.2021.106012
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Experimental and theoretical studies on structural, morphological, electronic, optical and magnetic properties of Zn1-xCuxO thin films (0≤x≤0.125)

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Cited by 7 publications
(1 citation statement)
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“…The top valence band of Tm-doped ZnO remained stationary, whereas the bottom conduction band moved to a lower energy region in comparison to pure ZnO, as seen in Figure 2(b) and 2(c). The calculated bandgap of Ag- and Cu-doped ZnO is 2.970 eV and 3.294 eV, respectively, which agrees with other experimental reports (Benrezgua et al , 2021; Mishra et al , 2022). From the previous theoretical works (Wan et al , 2009; Liu et al , 2020), the value of bandgap Ag-doped ZnO was 2.80 eV and Cu-doped ZnO was 3.25 eV due to different computer code, functional and U p values applied to Ag 4 d state and Cu 3 d state.…”
Section: Resultssupporting
confidence: 90%
“…The top valence band of Tm-doped ZnO remained stationary, whereas the bottom conduction band moved to a lower energy region in comparison to pure ZnO, as seen in Figure 2(b) and 2(c). The calculated bandgap of Ag- and Cu-doped ZnO is 2.970 eV and 3.294 eV, respectively, which agrees with other experimental reports (Benrezgua et al , 2021; Mishra et al , 2022). From the previous theoretical works (Wan et al , 2009; Liu et al , 2020), the value of bandgap Ag-doped ZnO was 2.80 eV and Cu-doped ZnO was 3.25 eV due to different computer code, functional and U p values applied to Ag 4 d state and Cu 3 d state.…”
Section: Resultssupporting
confidence: 90%